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BTB857AD3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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BTB857AD3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 5 page CYStech Electronics Corp. Spec. No. : C601D3 Issued Date : 2008.12.23 Revised Date : 2012.02.17 Page No. : 1/5 BTB857AD3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTB857AD3 Features • Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB = -2A / -0.2A • Excellent DC current gain characteristics • Wide SOA • RoHS compliant package Symbol Outline BTB857AD3 TO-126ML E C B B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Voltage VEBO -6 V IC(DC) -5 Collector Current IC(Pulse) -8 *1 A Pd(TA=25℃) 1.5 Power Dissipation Pd(TC=25℃) 20 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : *1 . Single Pulse Pw=10ms |
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