SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

V

SYMBOL

GBJ2506A

UNIT

700

600

1100

V

Minimum repetitive peak reverse voltage

Peak reverse non-repetitive voltage

Maximum avalanche breakdown

at 10

voltage

µA

Maximum average forward rectified output current, T = 105°C

c

Peak forward surge current single sine-wave superimposed on

rated load

Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)

for fusing

RMS isolation voltage from case to leads

Operating junction storage temperature range

2

I t

2500

800

25

400

2

A s

A

A

V

ºC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

µA

SYMBOL

GBJ2506A

UNIT

Instantaneous forward drop per diode

Maximum reverse DC current at rated DC blocking

150

0.89

0.2

voltage per diod

TEST

CONDITIONS

I

= 12.5A

F

T

= 25°C

A

T

= 125°C

A

THERMAL AND MECHANICAL (T = 25°C unless otherwise noted)

A

PARAMETER

°C/W

SYMBOL

GBJ2506A

UNIT

Typical thermal resistance

(1) With heatsink, single side heat dissipation, half sine wave.

(1)

0.8

Notes

Storage temperature range

ºC

TEST CONDITIONS

junction to case

Single-side heat dissipation, sine

half wave

Mounting

± 10 %

to heatsink M3

A mounting compound is recommended

and the torque should be rechecked after

a

for the spread

period of 3 hours to allow

of the compound.

0.8

.

N m

Approximate weight

6.5

torque

g

-

Product type : “GBJ” Package,1

Ø Bridge

1

2

3

-

-

I

rating : "25" for 25A

F(AV)

Ordering Information Tabel

Page 2 of 3

www.nellsemi.com

4

-

" " for avalanche type, Minimum avalanche breakdown voltage = V

+ 50V

RRM

A

Maximum avalanche breakdown voltage = V

+ 500V

RRM

Device code

GBJ

A

25

06

4

2

1

3

GBJ2506A

Minimum avalanche breakdown voltage at 10µA

650

V

TYP.

MAX.

0.92

2.0