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8PTxxGS Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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8PTxxGS Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd |
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2 / 7 page  Page 2 of 7 SEMICONDUCTOR 8PT Series RoHS RoHS 8PTxxxx Unit IGT VGD IH mA dV/dt VTM IDRM IRRM mA IL V = 12 V, R = 30Ω D L V = V , R = 3.3K D DRM L Ω I = 100 mA, gate open T I = 1.2 I G GT V = 67% V gate open D DRM , 0.2 25 150 0.85 mA V V mA V/µs I = 16A, TM t = 380 µs P T = 125°C j T = 25°C j T = 125°C j V µA STANDARD ELECTRICAL SPECIFICATIONS (TJ = 25 unless otherwise specified) ºC, TEST CONDITIONS SYMBOL V = V DRM RRM 1.6 5 1 Min. Max. Max. Min. Max. Min. Max. Max. Max. THERMAL RESISTANCE Rth(j-c) Junction to case (DC) Rth(j-a) Junction to ambient (DC) 1.3 70 °C/W °C/W UNIT VALUE SYMBOL Parameter IPAK/DPAK/TO-220AB D-PAK I-PAK TO-220AB, TO-220AB insulated 4.6 100 2 S = 0.5 cm VGT www.nellsemi.com 0.5 T 1.3 2 15 - 5 T = 125°C j Max. 30 30 70 50 Vto Threshold voltage V Rd T = 125°C j Max. 46 mΩ mA T = 25°C j T = 125°C j Dynamic resistance 8PTxxxx-S Unit IGT VGD mA dV/dt VTM IDRM IRRM mA IH V = 12 V, R = 140Ω D L V = V , R = 3.3K D DRM L Ω, R =220Ω GK I = 10 µA RG I = 50 mA R = 1 KΩ T , GK V = 67% V R = 220Ω D DRM GK , 0.1 6 0.85 µA V V V/µs I = 16A, TM t = 380 µs P T = 125°C j T = 25°C j T = 125°C j V µA SENSITIVE ELECTRICAL CHARACTERISTICS (Tj = 25 unless otherwise specified) ºC, TEST CONDITIONS SYMBOL V = V R = 220Ω DRM RRM, GK 1.6 5 1 Max. Max. Min. Max. Min. Max. Max. Max. VGT 0.8 200 T = 125°C j 8 5 Vto Threshold voltage V Rd T = 125°C j Max. 46 mΩ V T = 25°C j T = 125°C j Dynamic resistance VRG Min. IL I = 1 mA R = 1 KΩ G , GK Max. 5 mA TO-220AB insulated 60 S=Copper surface under tab |
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