©2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com

H11G1M, H11G2M, H11G3M Rev. 1.0.4

2

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol

Parameter

Value

Units

TOTAL DEVICE

Storage Temperature

-40 to +150

°C

Operating Temperature

-40 to +100

°C

Lead Solder Temperature (Wave Solder)

260 for 10 sec

°C

260

mW

Derate Above 25°C

3.5

mW/°C

EMITTER

Forward Input Current

60

mA

Reverse Input Voltage

6.0

V

Forward Current – Peak (1µs pulse, 300pps)

3.0

A

100

mW

Derate Above 25°C

1.8

mW/°C

DETECTOR

Collector-Emitter Voltage

V

H11G1M

100

H11G2M

80

H11G3M

55

200

mW

Derate Above 25°C

2.67

mW/°C