SEMICONDUCTOR

RoHS

RoHS

Page 2 of 4

DYNAMIC RECOVERY CHARACTERISTICS

unless otherwise specified)

ºC

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Reverse recovery time

I = 0.5A, I = 1A, I

= 0.25A

F

R

RR

30

ns

TJ = 25 ºC

IF = 60 A

VR= 200 V

TJ = 125 ºC

Peak recovery current

TJ = 25 ºC

A

TJ = 125

-

ºC

Reverse recovery charge

TJ = 25

-

ºC

nC

TJ = 125 ºC

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

Thermal resistance, junction to case

-

K/W

Typical thermal resistance, case to heatsink

Weight

N ⋅ m

Terminal torque (terminal), M6

75

440

-

90

-

-

18

-

-

7000

1100

20

290

8.7

NKFD300 Series

ELECTRICAL SPECIFICATIONS

unless otherwise specified)

ºC

PARAMETER

Cathode to anode

breakdown voltage

I = 100 µA

R

V

Maximum forward voltage

= 150 A

Maximum reverse leakage current

Junction capacitance

V = 200 V

R

pF

µA

-

-

-

200 to 600

-

-

-

J

T = 125 ºC, V = V

J

R

RRM

UNITS

MAX.

TYP.

MIN.

TEST CONDITIONS

SYMBOL

1.1

1.35

1.3

1.54

1

1.2

0.9

3

370

500

5

-

Series inductance

From top of terminal hole to

mounting plane

TJ = 25

-

ºC

A/µs

TJ = 125 ºC

-

-

-

140

420

2600

300

280

Peak rate of recovery current

dl(rec)/dt

UNITS

MAX.

TYP.

MIN.

SYMBOL

Maximum junction and storage temperature range

per leg

per module

T , T

J

stg

4

3

oz.

g

°C/W

°C

150

0.23

0.115

-

-

-

-

40

-

-

-

0.12

95

3.4

-

-

-

-

-

-

-

Note

(1) Mounting surface must be smooth, flat, free of burrs of other protrusions. Apply a thin even film or thermal grease to mounting

surface.

.

Gradually tighten each mounting bolt in 5 to 10 lbf in steps until desired or maximum torque limits are reached.