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MTN3K01N3 Datasheet(PDF) 3 Page - Cystech Electonics Corp. |
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MTN3K01N3 Datasheet(HTML) 3 Page - Cystech Electonics Corp. |
3 / 8 page CYStech Electronics Corp. Spec. No. : C831N3 Issued Date : 2012.07.04 Revised Date : 2013.06.26 Page No. : 3/8 MTN3K01N3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 2 4 6 8 10 00.511.5 2 VGS=3V VGS=10V VDS, Drain-Source Voltage(V) VGS=4.5V V =2.5V GS VGS=2V VGS=1.8V Brekdown Voltage vs Ambient Temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0 20 40 60 80 100 120 140 160 180 200 0.1 1 10 100 ID, Drain Current(A) VGS=4.5V VGS=2.5V VGS=2V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 IDR, Reverse Drain Current (A) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 40 80 120 160 200 02 46 8 10 Drain-Source On-State Resistance vs Junction Tempearture 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) VGS=4.5V, ID=2.5A VGS=2.5V, ID=2.5A VGS, Gate-Source Voltage(V) ID=2.5A ID=100mA |
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