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2N5206 Datasheet(PDF) 1 Page - Digitron Semiconductors |
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2N5206 Datasheet(HTML) 1 Page - Digitron Semiconductors |
1 / 7 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 2N681-2N692, 2N5204-2N5207 SILICON CONTROLLED RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol 2N681-2N692 2N5204-2N5207 Unit RMS on-state current IT(RMS) 25 35 A Average on-state current IT(AV) 16 22 A @ TC TC -65 to +65 -40 to +40 °C Peak one cycle surge @ 50 Hz 145 285 A Peak one cycle surge @ 60 Hz ITSM 150 300 A Fusing @ 50 Hz 103 410 Fusing @ 60 Hz I2t 94 375 A2s Gate current to trigger IGT 40 40 mA Typical critical dv/dt exponential to VDRM dv/dt - 100 V/µs Critical rate of rise di/dt 75-100 100 A/µs Typical junction temperature TJ -65 to 125 -40 to 125 °C VOLTAGE RATINGS (Applied gate voltage zero or negative) VRRM, VDRM Maximum repetitive peak reverse and off-state voltage (V) VRSM Maximum non-repetitive peak reverse voltage tp ≤ 5 ms (V) Part Number TJ = -65 to +125°C TJ = -65 to +125°C 2N681 25 35 2N682 50 75 2N683 100 150 2N685 200 300 2N687 300 400 2N688 400 500 2N689 500 600 2N690 600 720 2N691 700 840 2N692 800 960 TJ = -40 to 125°C TJ = -40 to 125°C 2N5204 600 720 2N5205 800 960 2N5206 1000 1200 2N5207 1200 1440 ELECTRICAL CHARACTERISTICS Symbol Characteristics 2N681-2N692 2N5204- 2N5207 Units Conditions IT(RMS) Maximum RMS on-state current 25 35 A IT(AV) Maximum average on-state current 16 22 A @ TC = -65 to +65 -40 to +40 °C 180° half sine wave conduction 145 285 50 Hz half cycle sine wave or 6 ms rectangular pulse 150 300 60 Hz half cycle sine wave or 5 ms rectangular pulse Following any rated load condition and with rated VRRM applied following surge 170 340 50 Hz half cycle sine wave or 6 ms rectangular pulse ITSM Maximum peak one cycle, non-repetitive surge current 180 355 A 60 Hz half cycle sine wave or 5 ms rectangular pulse Same conditions as above except with VRRM applied following surge = 0 103 410 t = 10 ms I2t Maximum I2t capability, for fusing 94 375 A2s t = 8.3 ms Rated VRRM applied following surge, initial TJ = 125°C 145 580 t = 10 ms I2t Maximum I2t capability for individual device fusing 135 530 A2s t = 8.3 ms VRRM = 0 following surge, initial TJ = 125°C sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130116 |
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