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2N1843A Datasheet(PDF) 1 Page - Digitron Semiconductors

Part No. 2N1843A
Description  SILICON CONTROLLED RECTIFIER
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Maker  DIGITRON [Digitron Semiconductors]
Homepage  http://www.digitroncorp.com
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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130116
2N1842-2N1850A
SILICON CONTROLLED RECTIFIER
TR1010-TR9010
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
RMS on-state current @ TC = 80°C
IT(RMS)
16
A
Mean on-state current @ TC = 80°C
IT(AV)
10
A
Non-repetitive surge peak on-state current @ TJ ≤ 125°C
t = 8.3ms
t = 10ms
ITSM
157
150
A
I2t for fusing @ TJ ≤ 125°C, t = 10ms
I2t
112.5
A2s
Critical rate of rise of on-state current
di/dt
100
A/µs
Operating junction temperature range
TJ
-40 to +150
°C
Storage temperature range
Tstg
-40 to +125
°C
VOLTAGE RATINGS
2N
1842(A)
2N
1843(A)
2N
1844(A)
2N
1846(A)
2N
1848(A)
2N
1849(A)
2N
1850(A)
TR
6010
TR
7010
TR
8010
TR
9010
TR
1010
TR
1110
TR
1210
TJ =
125°C
VOLTS
VDRM
=
VRRM
25
50
100
200
300
400
500
600
700
800
900
1000
1100
1200
THERMAL RESISTANCE
Thermal resistance
Symbol
Value
Unit
Junction to case for DC
Rth(j-c)
2
°C/W
Case to heatsink
Rth(c-h)
0.4
°C/W
ELECTRICAL CHARACTERISTICS
Value
Unit
Characteristic
Symbol
Min
Typ
Max
Test conditions
Gate trigger current
IGT
-
-
80
mA
TJ = 25°C
VD = 12V
RL = 33Ω
tp ≥ 20µs
Gate trigger voltage
VGT
-
-
3
V
TJ = 25°C
VD = 12V
RL = 33Ω
tp ≥ 20µs
Peak gate voltage
VGD
0.25
-
-
TJ = 125°C
VD = VDRM
RL = 3.3Ω
Holding current
IH
-
20
-
mA
TJ = 25°C
IT = 0.5A
Gate open
Peak on-state voltage
VTM
-
-
2.2
V
TJ = 25°C
ITM = 30A
tp = 10ms
Maximum off-state current
IDRM
-
-
5
mA
TJ = 125°C
VDRM specified
Maximum off-state current
IRRM
-
-
5
mA
TJ = 125°C
VRRM specified
Turn on time
tgt
-
2
-
µs
TJ = 25°C
IG = 200mA
IT = 30A
diG/dt = 2A/µs
VD = VDRM
Turn off time
tq
-
100
-
µs
TJ = 125°C
diR/dt = 30A/µs
IT = 10A
dv/dt = 20V/µs
VR = 30V
VD = 0.67 VDRM
Gate open
Critical rise of off-state voltage
dv/dt
100
-
-
V/µs
TJ = 125°C
Linear slope up to 0.67 VDRM specified




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