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2N1671B Datasheet(PDF) 1 Page - Digitron Semiconductors

Part No. 2N1671B
Description  UNIJUNCTION TRANSISTOR
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Maker  DIGITRON [Digitron Semiconductors]
Homepage  http://www.digitroncorp.com
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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
2N1671A - C
UNIJUNCTION TRANSISTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Base 1 – emitter reverse voltage
VB1E
30
V
Base 2 – emitter reverse voltage
VB2E
30
V
Interbase voltage
VB1B2
35
V
RMS emitter current
IFRMS
50
mA
Emitter peak current
IEM
2
A
Total power dissipation
Ptot
450
mW
Maximum junction temperature
TJ
150
°C
Storage temperature range
Tstg
-55 to 150
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
2N1671
-
-
-12
2N1671A
-
-
-12
Emitter reverse current
IEB2O
VB2E = 30V, IB1 = 0
2N1671B
-
-
-0.2
µA
2N1671
-
-
5
2N1671A
-
-
5
Emitter saturation voltage
VEB1(sat)
VB2B1 = 10V, IE = 50mA
2N1671B
-
-
5
V
2N1671
4.7
-
9.1
2N1671A
4.7
-
9.1
Interbase resistance
RBBO
VB2B1 = 3V, IE = 0
2N1671B
4.7
-
9.1
K□
2N1671
0.47
-
0.62
2N1671A
0.47
-
0.62
Intrinsic standoff ratio
η
VB2B1 = 10V
2N1671B
0.47
-
0.62
-
2N1671
-
-
8
2N1671A
-
-
8
Valley current
IV
VB2B1 = 10V, RB2 = 100□
2N1671B
-
-
8
mA
2N1671
-
-
25
2N1671A
-
-
25
Peak current
IP
VB2B1 = 25V
2N1671B
-
-
6
µA
sales@digitroncorp.com
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20121023




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