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2N1870A Datasheet(PDF) 1 Page - Digitron Semiconductors

Part No. 2N1870A
Description  SILICON CONTROLLED RECTIFIER
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Maker  DIGITRON [Digitron Semiconductors]
Homepage  http://www.digitroncorp.com
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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
2N1870A-2N1874A
SILICON CONTROLLED RECTIFIER
1.25 AMP
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Ratings
Symbol
2N1870A
2N1871A
2N1872A
2N1873A
2N1874A
Unit
Repetitive peak off state voltage
VDRM
30
60
100
150
200
V
Repetitive peak reverse voltage
VRRM
30
60
100
150
200
V
DC on state current
100°C ambient
100°C case
IT
250
1.25
mA
A
Repetitive peak on state current
ITRM
Up to 30
A
Peak one cycle surge (non-repetitive) on
state current
ITSM
15
A
Peak gate current
IGM
250
mA
Average gate current
IG(AV)
25
mA
Reverse gate voltage
VGR
5
V
Thermal resistance, junction to case
R
ӨJC
20
°C/W
Operating and storage temperature range
TJ, Tstg
-65 to 150
°C
ELECTRICAL CHARACTERISTICS (@ 25°C unless otherwise noted)
Test
Symbol
Min.
Typ.
Max.
Units
Test Conditions
25°C tests
Off-state current
IDRM
-
0.5
10
µA
RGK = 1K, VDRM = +rating
Reverse current
IRRM
-
0.5
10
µA
RGK = 1K, VRRM = - rating
Gate trigger voltage
VGT
0.4
0.55
0.8
V
RGS = 100ohms, VD = 5V
Gate trigger current
IGT
-
30
200
µA
RGS > 10K ohms, VD = 5V
On-state voltage
VTM
-
1.8
2.5
V
ITM = 2A (pulse test)
Off-state voltage – critical rate of rise
dvc/dt
100
-
-
V/µs
Specified test circuit
Reverse gate current
IGR
-
0.5
10
µA
VGRM = 5V, anode open
Holding current
IH
0.3
-
5.0
mA
IG = -150µA, VD = 5V
125°C tests
High temperature off state current
IDRM
-
15
100
µA
RGK = 1K, VDRM = + rating
High temperature reverse current
IRRM
-
15
100
µA
RGK = 1K, VRRM = - rating
High temperature gate non-trigger voltage
VGD
0.2
-
-
V
RGS = 100 ohms, VD = 5V
High temperature holding current
IH
0.2
-
-
mA
IG = -150µA, VD = 5V
-65 °C tests
Low temperature gate trigger voltage
VGT
-
-
1.0
V
RGK = 100 ohms, VD = 5V
Low temperature gate trigger current
IGT
-
-
500
µA
RGK > 10K ohms, VD = 5V
Low temperature holding current
IH
-
-
15
mA
IG = -150µA, VD = 5V
Voltage ratings apply over the full operating temperature range provided the gate is connected to the cathode through a resistor, 1K or smaller, or other adequate gate bias is used.
sales@digitroncorp.com
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130116




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