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LM6134BINNOPB Datasheet(PDF) 1 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LM6134BINNOPB
Description  LM6132/LM6134 Dual and Quad Low Power 10 MHz Rail-to-Rail I/O Operational Amplifiers
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM6134BINNOPB Datasheet(HTML) 1 Page - National Semiconductor (TI)

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LM6132
www.ti.com
SNOS751D – APRIL 2000 – REVISED FEBRUARY 2013
LM6132/LM6134 Dual and Quad Low Power 10 MHz Rail-to-Rail I/O Operational Amplifiers
Check for Samples: LM6132
1
FEATURES
DESCRIPTION
The LM6132/34 provides new levels of speed vs.
2
(For 5V Supply, Typ Unless Noted)
power performance in applications where low voltage
Rail-to-Rail Input CMVR
−0.25V to 5.25V
supplies
or
power
limitations
previously
made
Rail-to-Rail Output Swing 0.01V to 4.99V
compromise necessary. With only 360
μA/amp supply
current, the 10 MHz gain-bandwidth of this device
High Gain-Bandwidth, 10 MHz at 20 kHz
supports new portable applications where higher
Slew Rate 12 V/
μs
power devices unacceptably drain battery life.
Low Supply Current 360
μA/Amp
The LM6132/34 can be driven by voltages that
Wide Supply Range 2.7V to over 24V
exceed both power supply rails, thus eliminating
CMRR 100 dB
concerns over exceeding the common-mode voltage
range. The rail-to-rail output swing capability provides
Gain 100 dB with RL = 10k
the maximum possible dynamic range at the output.
PSRR 82 dB
This is particularly important when operating on low
supply voltages. The LM6132/34 can also drive large
APPLICATIONS
capacitive loads without oscillating.
Battery Operated Instrumentation
Operating on supplies from 2.7V to over 24V, the
Instrumentation Amplifiers
LM6132/34 is excellent for a very wide range of
applications, from battery operated systems with
Portable Scanners
large
bandwidth
requirements
to
high
speed
Wireless Communications
instrumentation.
Flat Panel Display Driver
Connection Diagram
Figure 1. 8-Pin SOIC/PDIP (Top View)
Figure 2. 14-Pin SOIC/PDIP (Top View)
See Package Number D and P
See Package Number D and NFF0014A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2000–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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