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LMC6061AIMX Datasheet(PDF) 1 Page - National Semiconductor (TI) |
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LMC6061AIMX Datasheet(HTML) 1 Page - National Semiconductor (TI) |
1 / 21 page LMC6061 www.ti.com SNOS648D – NOVEMBER 1994 – REVISED MARCH 2013 PRECISION CMOS SINGLE MICROPOWER OPERATIONAL AMPLIFIER Check for Samples: LMC6061 1 FEATURES DESCRIPTION The LMC6061 is a precision single low offset voltage, 2 (Typical Unless Otherwise Noted) micropower operational amplifier, capable of • Low Offset Voltage: 100 µV precision single supply operation. Performance • Ultra Low Supply Current: 20 μA characteristics include ultra low input bias current, high voltage gain, rail-to-rail output swing, and an • Operates From 4.5V to 15V Single Supply input common mode voltage range that includes • Ultra Low Input Bias Current: 10 fA ground. These features, plus its low power • Output Swing Within 10 mV of Supply Rail, consumption, make the LMC6061 ideally suited for 100k Load battery powered applications. • Input Common-mode Range Includes V− Other applications using the LMC6061 include • High Voltage Gain: 140 dB precision full-wave rectifiers, integrators, references, sample-and-hold circuits, and true instrumentation • Improved Latchup Immunity amplifiers. APPLICATIONS This device is built with TI's advanced double-Poly Silicon-Gate CMOS process. • Instrumentation Amplifier For designs that require higher speed, see the • Photodiode and Infrared Detector Preamplifier LMC6081 precision single operational amplifier. • Transducer Amplifiers For a dual or quad operational amplifier with similar • Hand-held Analytic Instruments features, see the LMC6062 or LMC6064 respectively. • Medical Instrumentation PATENT PENDING • D/A Converter • Charge Amplifier for Piezoelectric Transducers Connection Diagrams Figure 1. 8-Pin PDIP/SOIC Figure 2. Distribution of LMC6061 Input Offset Voltage (TA = +25°C) Top View These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Copyright © 1994–2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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