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LM6134 Datasheet(PDF) 1 Page - National Semiconductor (TI) |
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LM6134 Datasheet(HTML) 1 Page - National Semiconductor (TI) |
1 / 24 page LM6132 www.ti.com SNOS751D – APRIL 2000 – REVISED FEBRUARY 2013 LM6132/LM6134 Dual and Quad Low Power 10 MHz Rail-to-Rail I/O Operational Amplifiers Check for Samples: LM6132 1 FEATURES DESCRIPTION The LM6132/34 provides new levels of speed vs. 2 • (For 5V Supply, Typ Unless Noted) power performance in applications where low voltage • Rail-to-Rail Input CMVR −0.25V to 5.25V supplies or power limitations previously made • Rail-to-Rail Output Swing 0.01V to 4.99V compromise necessary. With only 360 μA/amp supply current, the 10 MHz gain-bandwidth of this device • High Gain-Bandwidth, 10 MHz at 20 kHz supports new portable applications where higher • Slew Rate 12 V/ μs power devices unacceptably drain battery life. • Low Supply Current 360 μA/Amp The LM6132/34 can be driven by voltages that • Wide Supply Range 2.7V to over 24V exceed both power supply rails, thus eliminating • CMRR 100 dB concerns over exceeding the common-mode voltage range. The rail-to-rail output swing capability provides • Gain 100 dB with RL = 10k the maximum possible dynamic range at the output. • PSRR 82 dB This is particularly important when operating on low supply voltages. The LM6132/34 can also drive large APPLICATIONS capacitive loads without oscillating. • Battery Operated Instrumentation Operating on supplies from 2.7V to over 24V, the • Instrumentation Amplifiers LM6132/34 is excellent for a very wide range of applications, from battery operated systems with • Portable Scanners large bandwidth requirements to high speed • Wireless Communications instrumentation. • Flat Panel Display Driver Connection Diagram Figure 1. 8-Pin SOIC/PDIP (Top View) Figure 2. 14-Pin SOIC/PDIP (Top View) See Package Number D and P See Package Number D and NFF0014A These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Copyright © 2000–2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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