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LM614IWMNOPB Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LM614IWMNOPB
Description  LM614 Quad Operational Amplifier and Adjustable Reference
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM614IWMNOPB Datasheet(HTML) 2 Page - National Semiconductor (TI)

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LM614
SNOSC21C – MAY 1998 – REVISED MARCH 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2)
Voltage on Any Pins except VR
36V (Max)(3)
(referred to Vpin)
−0.3V (Min)(4)
Current through Any Input Pin & VR Pin
±20
Differential Input Voltage
LM614I
±36V
LM614C
±32V
Storage Temperature Range
−65°C ≤ TJ ≤ +150°C
Maximum Junction Temperature
150°C
Thermal Resistance, Junction-to-Ambient(5)
150°C
Soldering Information (Soldering, 10 sec.)
220°C
ESD Tolerance(6)
±1kV
(1)
Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply
when operating the device beyond its rated operating conditions.
(2)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3)
Input voltage above V+ is allowed.
(4)
More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a
diode drop below V
−, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below
the Maximum Rating. Operation is undefined and unpredictable when any parasitic diode or transistor is conducting.
(5)
Junction temperature may be calculated using TJ = TA + P D
θjA. The given thermal resistance is worst-case for packages in sockets in
still air. For packages soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal
θjA is
90°C/W for the DW package.
(6)
Human body model, 100 pF discharged through a 1.5 k
Ω resistor.
Operating Temperature Range
LM614I
−40°C ≤ TJ ≤ +85°C
LM614C
0°C
≤ TJ ≤ +70°C
Electrical Characteristics
These specifications apply for V
= GND = 0V, V+ = 5V, V
CM = VOUT = 2.5V, IR = 100μA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25°C; limits in Boldface type apply over the Operating
Temperature Range.
Symbol
Parameter
Conditions
Typ(1)
LM614I
Units
LM614C
Limits(2)
IS
Total Supply Current
RLOAD = ∞,
450
1000
μA max
4V
≤ V+ ≤ 36V (32V for LM614C)
550
1070
μA max
VS
Supply Voltage Range
2.2
2.8
V min
2.9
3
V min
46
32
V max
43
32
V max
OPERATIONAL AMPLIFIER
VOS1
VOS Over Supply
4V
≤ V+ ≤ 36V
1.5
5.0
mV max
(4V
≤ V+ ≤ 32V for LM614C)
2.0
7.0
mV max
VOS2
VOS Over VCM
V CM = 0V through VCM =
1.0
5.0
mV max
(V +
− 1.8V), V+ = 30V
1.5
7.0
mV max
VOS3
Average VOS Drift
See (2)
μV/°C
15
ΔT
max
IB
Input Bias Current
10
35
nA max
11
40
nA max
IOS
Input Offset Current
0.2
4
nA max
0.3
5
nA max
(1)
Typical values in standard typeface are for TJ = 25°C; values in boldface type apply for the full operating temperature range. These
values represent the most likely parametric norm.
(2)
All limits are ensured at room temperature (standard type face) or at operating temperature extremes (bold type face).
2
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Copyright © 1998–2013, Texas Instruments Incorporated
Product Folder Links: LM614


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