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LM614IWMNOPB Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM614IWMNOPB Datasheet(HTML) 2 Page - National Semiconductor (TI) |
2 / 28 page LM614 SNOSC21C – MAY 1998 – REVISED MARCH 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) Voltage on Any Pins except VR 36V (Max)(3) (referred to V− pin) −0.3V (Min)(4) Current through Any Input Pin & VR Pin ±20 Differential Input Voltage LM614I ±36V LM614C ±32V Storage Temperature Range −65°C ≤ TJ ≤ +150°C Maximum Junction Temperature 150°C Thermal Resistance, Junction-to-Ambient(5) 150°C Soldering Information (Soldering, 10 sec.) 220°C ESD Tolerance(6) ±1kV (1) Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device beyond its rated operating conditions. (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. (3) Input voltage above V+ is allowed. (4) More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below V −, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined and unpredictable when any parasitic diode or transistor is conducting. (5) Junction temperature may be calculated using TJ = TA + P D θjA. The given thermal resistance is worst-case for packages in sockets in still air. For packages soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal θjA is 90°C/W for the DW package. (6) Human body model, 100 pF discharged through a 1.5 k Ω resistor. Operating Temperature Range LM614I −40°C ≤ TJ ≤ +85°C LM614C 0°C ≤ TJ ≤ +70°C Electrical Characteristics These specifications apply for V − = GND = 0V, V+ = 5V, V CM = VOUT = 2.5V, IR = 100μA, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for TJ = 25°C; limits in Boldface type apply over the Operating Temperature Range. Symbol Parameter Conditions Typ(1) LM614I Units LM614C Limits(2) IS Total Supply Current RLOAD = ∞, 450 1000 μA max 4V ≤ V+ ≤ 36V (32V for LM614C) 550 1070 μA max VS Supply Voltage Range 2.2 2.8 V min 2.9 3 V min 46 32 V max 43 32 V max OPERATIONAL AMPLIFIER VOS1 VOS Over Supply 4V ≤ V+ ≤ 36V 1.5 5.0 mV max (4V ≤ V+ ≤ 32V for LM614C) 2.0 7.0 mV max VOS2 VOS Over VCM V CM = 0V through VCM = 1.0 5.0 mV max (V + − 1.8V), V+ = 30V 1.5 7.0 mV max VOS3 Average VOS Drift See (2) μV/°C 15 ΔT max IB Input Bias Current 10 35 nA max 11 40 nA max IOS Input Offset Current 0.2 4 nA max 0.3 5 nA max (1) Typical values in standard typeface are for TJ = 25°C; values in boldface type apply for the full operating temperature range. These values represent the most likely parametric norm. (2) All limits are ensured at room temperature (standard type face) or at operating temperature extremes (bold type face). 2 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: LM614 |
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