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BCR25FM12LB Datasheet(PDF) 2 Page - Renesas Technology Corp |
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BCR25FM12LB Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page BCR25FM-12LB Preliminary R07DS0964EJ0100 Rev.1.00 Page 2 of 7 Feb 28, 2014 Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current IDRM — — 3.0 mA Tj = 125 °C, VDRM applied — — 5.0 mA Tj = 150 °C, VDRM applied On-state voltage VTM — — 1.5 V Tc = 25 °C, ITM = 40 A, instantaneous measurement Gate trigger voltage Note2 Ι VFGTΙ — — 2.0 V Tj = 25 °C, VD = 6 V, RL = 6 Ω, RG = 330 Ω ΙΙ VRGTΙ — — 2.0 V ΙΙΙ VRGTΙΙΙ — — 2.0 V Gate trigger curent Note2 Ι IFGTΙ — — 50 mA Tj = 25 °C, VD = 6 V, RL = 6 Ω, RG = 330 Ω ΙΙ IRGTΙ — — 50 mA ΙΙΙ IRGTΙΙΙ — — 50 mA Gate non-trigger voltage VGD 0.2 — — V Tj = 125 °C, VD = 1/2 VDRM 0.1 — — V Tj = 150 °C, VD = 1/2 VDRM Thermal resistance Rth (j-c) — — 2.8 °C/W Junction to case Note3 Critical-rate of rise of off-state commutation voltage Note4 (dv/dt)c 10 — — V/ μs Tj = 125 °C 1 — — V/ μs Tj = 150 °C Notes: 1. Gate open. 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5 °C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. 5. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj = 125 °C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = –13 A/ms 3. Peak off-state voltage VD = 400 V Supply Voltage Time Time Time Main Current Main Voltage (di/dt)c VD (dv/dt)c |
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