2N4216 datasheet(1/2 Pages) DIGITRON

Part #	2N4216

Description	SILICON CONTROLLED RECTIFIERS 1.6 AMPS RMS, 25-400 VOLTS

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Manufacturer	DIGITRON [Digitron Semiconductors]

Direct Link	http://www.digitroncorp.com

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DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

2N4212-2N4216, 2N4219

SILICON CONTROLLED RECTIFIERS

1.6 AMPS RMS, 25-400 VOLTS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive forward and reverse blocking voltage (1)

2N4212

2N4213

2N4214

2N4216

2N4219

VDRM or VRRM

25

50

100

200

400

Volts

Forward current RMS

(All conduction angles)

IT(RMS)

1.6

Amps

Peak surge current

(One cycle, 60Hz)

No repetition until thermal equilibrium is restored

ITSM

15

Amps

Forward peak gate power

PGFM

0.1

Watt

Forward average gate power

PGF(AV)

0.01

Watt

Forward peak gate current

IGFM

0.1

Amp

Forward peak gate voltage

VGFM

6

Volts

Reverse peak gate voltage

VGRM

6

Volts

Operating junction temperature range

TJ

-65 to 125

°C

Storage temperature range

Tstg

-65 to 150

°C

Lead solder temperature

(> 1/16” from case, 10 s max.)

-

230

°C

Note 1: VDRM and VRRM can be applied for all types on a continuous dc basis without incurring damage.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted, RGK = 1000ohms)(1)

Characteristic

Symbol

Min

Max

Unit

Peak forward or reverse blocking current

(Rated VDRM or VRRM, gate open)

TJ = 25°C

TJ = 125°C

IDRM, IRRM

-

10

200

µA

Forward “on” voltage

(ITM = 1Adc peak)

VTM

-

1.5

Volts

Gate trigger current (continuous dc)(2)

(VD = 7V, RL = 100ohms)

(TC = 25°C)

(TC = -65°C)

IGT

-

100

300

µAdc

Gate trigger voltage (continuous dc)

(VD = 7V, RL = 100ohms, TC = 25°C)

(VD = 7V, RL = 100ohms, TC = -65°C)

(VD = rated VDRM, RL = 100ohms, TJ = 125°C)

VGT

-

0.1

0.8

1

-

Volts

Holding current

(VD = 7V)

TC = 25°C

TC = -65°C

IHX

-

3

7

mA

Note 1: Thyristor devices shall not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.

Thyristor

devices shall not have a positive bias applied to the gate concurrently with a negative potential applied to the anode.

Note 2: RGK current is not included in the measurement.

sales@digitroncorp.com

fax +1.908.245-0555

www.digitroncorp.com

Rev. 20130108

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