DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

2N6116-2N6118

SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Repetitive peak forward current

100µs pulse width, 1.0% duty cycle

20µs pulse width, 1.0% duty cycle

1.0

2.0

Amp

Non repetitive peak forward current

10µs pulse width

5.0

Amp

DC forward anode current

Derate above 25°C

200

2.0

mA

mA/°C

DC gate current

±20

mA

Gate to cathode forward voltage

40

Volt

Gate to cathode reverse voltage

5.0

Volt

Gate to anode reverse voltage

40

Volt

Anode to cathode voltage

±40

Volt

Derate above 25°C

1/

ӨJA

250

2.5

mW

mW/°C

Operating junction temperature range

-55 to 125

°C

Storage temperature range

-65 to 200

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Offset voltage

2N6116

2N6117

2N6118

All types

0.2

0.2

0.2

0.2

0.70

0.50

0.40

0.35

1.6

0.6

0.6

0.6

Volts

Gate to anode leakage current

-

-

1.0

30

5.0

75

nAdc

Gate to cathode leakage current

-

5.0

50

nAdc

Peak current

2N6116

2N6117

2N6118

2N6116

2N6117

2N6118

-

-

-

-

-

-

1.25

0.19

0.08

4.00

1.20

0.70

2.00

0.30

0.15

5.00

2.00

1.00

µA

Valley current

2N6116, 2N6117

2N6118

2N6116

2N6117, 2N6118

-

-

70

50

18

18

270

270

50

25

-

-

µA

Forward voltage

-

0.8

1.5

Volts

Peak output voltage

6.0

16

-

Volts

Pulse voltage rise time

-

40

80

ns

sales@digitroncorp.com

fax +1.908.245-0555

www.digitroncorp.com

Rev. 20130121