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PDTA114TK Datasheet(PDF) 4 Page - NXP Semiconductors |
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PDTA114TK Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 11 page PDTC114T_SER_8 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 08 — 9 February 2006 4 of 11 Philips Semiconductors PDTC114T series NPN resistor-equipped transistors; R1 = 10 k Ω, R2 = open 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint. Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 5 V IO output current - 100 mA ICM peak collector current single pulse; tp ≤ 1ms - 100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT416 [1] - 150 mW SOT346 [1] - 250 mW SOT883 [2] [3] - 250 mW SOT54 [1] - 500 mW SOT23 [1] - 250 mW SOT323 [1] - 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air SOT416 [1] - - 833 K/W SOT346 [1] - - 500 K/W SOT883 [2] [3] - - 500 K/W SOT54 [1] - - 250 K/W SOT23 [1] - - 500 K/W SOT323 [1] - - 625 K/W |
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