CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST

www.vishay.com

Vishay Semiconductors

Rev. 1.0, 20-Sep-11

2

Document Number: 82387

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

5V

Forward current

75

mA

Forward surge current

≤ 10 μs

1.5

A

Power dissipation

120

mW

Junction temperature

100

°C

OUTPUT

Collector emitter voltage

32

V

Emitter collector voltage

7V

Collector current

50

mA

Collector peak current

≤ 10 ms

100

mA

Power dissipation

130

mW

Junction temperature

100

°C

COUPLER

AC isolation test voltage CNY64AxxxST

t = 1 min

8.2

DC isolation test voltage CNY65AxxxST

t = 1 s

13.9

kV

Total power dissipation

250

mW

Ambient temperature range

- 55 to + 85

°C

Storage temperature range

- 55 to + 100

°C

Soldering temperature

2 mm from case,

≤ 10 s

260

°C

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

1.32

1.6

V

Junction capacitance

50

pF

OUTPUT

Collector emitter voltage

32

V

Emitter collector voltage

7V

Collector emitter leakage current

200

nA

COUPLER

Collector emitter saturation voltage

0.3

V

Cut-off frequency

Ω

110

kHz

Coupling capacitance

f = 1 MHz

0.3

pF