Electronic Components Datasheet Search |
|
THS4511RGTTG4 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
|
|
THS4511RGTTG4 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
2 / 35 page THS4511 SLOS471E – SEPTEMBER 2005 – REVISED NOVEMBER 2009 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ABSOLUTE MAXIMUM RATINGS (1) Over operating free-air temperature range, unless otherwise noted. UNIT VSS Supply VS– to VS+ 5.5 V voltage VI Input voltage ±VS VID Differential input voltage 4 V IO Output current 200 mA Continuous power dissipation See Dissipation Ratings Table TJ Maximum junction temperature(2) +150°C TJ Maximum junction temperature, continuous operation, long term reliability(3) +125°C TA Operating free-air temperature range –40°C to +85°C TSTG Storage temperature range –65°C to +150°C HBM 2000 V ESD ratings CDM 1500 V MM 100 V (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. (2) The absolute maximum temperature under any condition is limited by the constraints of the silicon process. (3) The maximum junction temperature for continuous operation is limited by the package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device. The THS4511 incorporates a (QFN) exposed thermal pad on the underside of the chip. This acts as a heatsink and must be connected to a thermally-dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could permanently damage the device. See TI technical brief SLMA002 and SLMA004 for more information about using the QFN thermally-enhanced package. DISSIPATION RATINGS TABLE POWER RATING PACKAGE(1) θJC θJA TA ≤ +25°C TA = +85°C RGT (16) 2.4°C/W 39.5°C/W 2.3 W 225 mW (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. 2 Submit Documentation Feedback Copyright © 2005–2009, Texas Instruments Incorporated Product Folder Link(s): THS4511 |
Similar Part No. - THS4511RGTTG4 |
|
Similar Description - THS4511RGTTG4 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |