THS4511

SLOS471E – SEPTEMBER 2005 – REVISED NOVEMBER 2009

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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

ABSOLUTE MAXIMUM RATINGS

(1)

Over operating free-air temperature range, unless otherwise noted.

UNIT

Supply

5.5 V

voltage

Input voltage

Differential input voltage

4 V

Output current

200 mA

Continuous power dissipation

See Dissipation Ratings Table

+150°C

+125°C

Operating free-air temperature range

–40°C to +85°C

Storage temperature range

–65°C to +150°C

HBM

2000 V

ESD ratings

CDM

1500 V

MM

100 V

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

(2)

The absolute maximum temperature under any condition is limited by the constraints of the silicon process.

(3)

The maximum junction temperature for continuous operation is limited by the package constraints. Operation above this temperature

may result in reduced reliability and/or lifetime of the device. The THS4511 incorporates a (QFN) exposed thermal pad on the underside

of the chip. This acts as a heatsink and must be connected to a thermally-dissipative plane for proper power dissipation. Failure to do so

may result in exceeding the maximum junction temperature which could permanently damage the device. See TI technical brief

SLMA002 and SLMA004 for more information about using the QFN thermally-enhanced package.

DISSIPATION RATINGS TABLE

POWER RATING

RGT (16)

2.4°C/W

39.5°C/W

2.3 W

225 mW

(1)

For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

web site at www.ti.com.

2

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