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MAC800A-80 Datasheet(PDF) 1 Page - Digitron Semiconductors

Part # MAC800A-80
Description  SILICON BIDIRECTIONAL THYRISTORS
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Manufacturer  DIGITRON [Digitron Semiconductors]
Direct Link  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

MAC800A-80 Datasheet(HTML) 1 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
MAC800,(A),(B) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = 125°C)
MAC800-2, MAC800A-2, MAC800B-2
MAC800-5, MAC800A-5, MAC800B-5
MAC800-10, MAC800A-10, MAC800B-10
MAC800-20, MAC800A-20, MAC800B-20
MAC800-40, MAC800A-40, MAC800B-40
MAC800-60, MAC800A-60, MAC800B-60
MAC800-80, MAC800A-80, MAC800B-80
VDRM
25
50
100
200
400
600
800
Volts
RMS on-state current (full sine wave, 50 to 60Hz, TC = 95°C)
IT(RMS)
4.0
Amps
Peak non-repetitive surge current
(1 cycle, 60 Hz, TJ = -40 to +125°C)
ITSM
40
Amps
Circuit fusing considerations (TJ = -40 to +125°C, t = 8.3ms)
I2t
6.5
A2s
Peak gate power (t ≤ 10µs)
PGM
10
Watts
Average gate power
PG(AV)
0.5
Watts
Peak gate voltage (pulse width ≤ 10µs)
VGM
5.0
Volts
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
* Soldering temperatures shall not exceed 200°C for 10 seconds.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum
Unit
Thermal resistance, junction to case
R
ӨJC
5.0
°C/W
Thermal resistance, junction to ambient
R
ӨJA
150
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ.
Max
Unit
Peak blocking current (either direction)
(Rated VDRM @ TJ = 125°C, gate open)
IDRM
-
0.5
2.0
mA
Peak on-state voltage (either direction)
(ITM = 6.0A peak, pulse width ≤ 300µs, duty cycle ≤ 2%)
VTM
-
-
2.0
Volts
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω, TJ = 40°C, minimum gate pulse width = 8.3ms)
MT2(+),G(+); MT2(-),G(-), all types
MT2(+),G(-); MT2(-),G(+), MAC800A, B
(VD = Rated VDRM, RL = 10kΩ, TJ = 125°C, minimum pulse width = 8.3ms)
MT2(+),G(+); MT2(-),G(-), all types
MT2(+),G(-); MT2(-),G(+), MAC800A, B
VGT
-
-
0.2
0.2
1.4
1.4
-
-
2.5
2.5
-
-
Volts
Holding current (either direction)
(VD = 12V, gate open, initiating current = 1.0A, TJ = -40°C) MAC800 Series
(VD = 12V, gate open, initiating current = 1.0A, TJ = -40°C) MAC800A, B Series
(VD = 12V, gate open, initiating current = 1.0A, TJ = 25°C) MAC800 Series
(VD = 12V, gate open, initiating current = 1.0A, TJ = 25°C) MAC800A, B Series
IH
-
-
-
-
-
-
-
-
70
30
30
15
mA
Gate controlled turn on time
(VD = rated VDRM, ITM = 14A peak, IGT = 100mA)
tgt
-
1.0
2.0
µs
sales@digitroncorp.com
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130208


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