MAC320A-4 datasheet(1/4 Pages) DIGITRON

Part #	MAC320A-4

Description	SILICON BIDIRECTIONAL THYRISTORS

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Manufacturer	DIGITRON [Digitron Semiconductors]

Direct Link	http://www.digitroncorp.com

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DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

MAC320(A) SERIES

SILICON BIDIRECTIONAL THYRISTORS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage(1)

(TJ = -40 to +125°C, ½ sine wave, 50 to 60Hz, gate open)

MAC320-4, MAC320A-4

MAC320-6, MAC320A-6

MAC320-8, MAC320A-8

MAC320-10, MAC320A-10

VDRM

200

400

600

800

Volts

Peak gate voltage

VGM

10

Volts

RMS on-state current (Full cycle sine wave, 50 to 60Hz, TC = 75°C)

IT(RMS)

20

Amps

Peak non-repetitive surge current

(1 cycle, 60Hz, TC = 75°C, preceded and followed by rated current)

ITSM

150

Amps

Peak gate power (TC = 75°C, t ≤ 2µs)

PGM

20

Watts

Average gate power (TC = 75°C, t ≤ 8.3ms)

PG(AV)

0.5

Watts

Peak gate current

IGM

2

Amps

Operating junction temperature range

TJ

-40 to +125

°C

Storage temperature range

Tstg

-40 to +150

°C

Note 1: VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are

exceeded.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Maximum

Unit

Thermal resistance, junction to case

R

ӨJC

1.8

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted)

Characteristic

Symbol

Min

Typ.

Max

Unit

Peak blocking current

(VD = Rated VDRM, gate open, TJ = 25°C)

(VD = Rated VDRM, gate open, TJ = 125°C)

IDRM

-

10

2

µA

mA

Peak on-state voltage (either direction)

(ITM = 28A peak, pulse width ≤ 2ms, duty cycle ≤ 2%.)

VTM

-

1.4

1.7

Volts

Gate trigger current (continuous dc)

(VD = 12V, RL = 100Ω)

MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)

MT2(-),G(+) “A” suffix only

IGT

-

50

75

mA

Gate trigger voltage (continuous dc)

(VD = 12V, RL = 100Ω)

MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)

MT2(-),G(+) “A” suffix only

(VD = Rated VDRM, RL = 10kΩ, TJ = 110°C)

MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)

MT2(-),G(+) “A” suffix only

VGT

-

0.2

0.9

1.4

-

2.0

2.5

-

Volts

Holding current (either direction)

(VD = 12V, ITM = 200mA, gate open)

IH

-

6

40

mA

Gate controlled turn-on time

(VD = Rated VDRM, ITM = 28A, IG = 120mA, rise time = 0.1µs, pulse width = 2µs)

tgt

-

1.5

-

µs

Critical rate of rise of commutation voltage

(VD = Rated VDRM, ITM = 28A peak, commutating di/dt = 10A/ms, gate unenergized,

TC = 75°C)

dv/dt(c)

-

5

-

V/µs

sales@digitroncorp.com

fax +1.908.245-0555

www.digitroncorp.com

Rev. 20130213

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