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THS4221DBVRG4 Datasheet(PDF) 6 Page - National Semiconductor (TI) |
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THS4221DBVRG4 Datasheet(HTML) 6 Page - National Semiconductor (TI) |
6 / 41 page THS4221, THS4225 THS4222, THS4226 SLOS399G − AUGUST 2002 − REVISED JANUARY 2004 www.ti.com 6 ELECTRICAL CHARACTERISTICS (continued) VS = 5 V, RL = 499 Ω, and G = 1 unless otherwise noted TYP OVER TEMPERATURE PARAMETER TEST CONDITIONS 25°C 25°C 0°C to 70°C −40°C to 85°C UNITS MIN/ MAX POWER SUPPLY Specified operating voltage 5 15 15 15 V Max Maximum quiescent current Per channel 12 15 17 19 mA Max Power supply rejection (±PSRR) 70 62 60 60 dB Min POWER-DOWN CHARACTERISTICS Maximum power-down current PD ≤ REF +1.0 V, REF = 0 V, Per channel 500 750 900 900 µA Max REF 0 V or VS Enable REF+1.8 V Min Power down voltage level(1) REF = 0 V, or VS− Power down REF+1 V Max Power-down voltage level(1) REF VS or floating Enable REF−1 V Min REF = VS+ or floating Power down REF−1.5 V Max Turnon time delay 50% of final value 200 ns Typ Turnoff time delay 50% of final value 500 ns Typ Input impedance 58 Ω Typ Isolation f = 5 MHz 80 dB Typ (1) For detail information on the power-down circuit, refer to the powerdown section in the application information of this data sheet. |
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