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UF840G-TA3-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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UF840G-TA3-T Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 9 page UF840 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 9 www.unisonic.com.tw QW-R502-047.H INTERNAL PACKAGE INDUCTANCE PARAMETER SYMBOL MIN TYP MAX UNIT DRAIN INDUCTANCE Measured from the contact screw on tab to center of die Measured from the drain lead(6mm from package) to center of die LD 3.5 nH 4.5 nH SOURCE INDUCTANCE Measured from the source lead(6mm from header) to source bond pad LS 7.5 nH Remark: Modified MOSFET symbol showing the internal devices inductances as below. SOURCE TO DRAIN DIODE SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Source to Drain Diode Voltage(Note 1) VSD TJ = 25°C, ISD = 8.0A, VGS = 0V 2 V Continuous Source to Drain Current ISD Note 2 8 A Pulse Source to Drain Current ISDM 32 A Reverse Recovery Time trr TJ = 25°C, ISD = 8.0A, dISD/dt = 100A/μs 210 475 970 ns Reverse Recovery Charge QRR TJ = 25°C, ISD = 8.0A, dISD/dt = 100A/μs 2 4.6 8.2 μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below. |
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