MJE13009

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

7 of 9

www.unisonic.com.tw

QW-R203-024,F

TYPICAL CHARATERISTICS

160

Fig. 3 Forward Bias Power Derating

0

0.6

140

20

40

100

0.4

80

0.8

Thermal

Derating

Second Breakdown

Derating

60

120

1

0.2

There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown.

that must be observed for reliable operation; i.e., the transistor

must not be subjected to greater dissipation than the curves

indicate.

depending on power level. Second breakdown pulse limits are

Second breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on Fig. 1 may

be found at any case temperature by using the appropriate curve

on Fig. 3.

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed

by second breakdown. Use of reverse biased safe operating

area data (Fig. 2) is discussed in the applications information

section.

2

0.01

0.2

Time, t (ms)

1

0.05

0.3

0.01

0.02

0.2

0.7

0.07

0.1

0.5

0.1

D = 0.5

0.05

0.05

5

0.5

1

0.03

0.02

0.1

0.2

10

20

50

100

200

500

1.0k

Single Pulse

0.02

0.01

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN