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RJH60T04DPQA1 Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # RJH60T04DPQA1
Description  600V - 30A - IGBT
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH60T04DPQA1 Datasheet(HTML) 1 Page - Renesas Technology Corp

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R07DS1191EJ0200 Rev.2.00
Page 1 of 7
Apr 02, 2014
Preliminary Datasheet
RJH60T04DPQ-A1
600V - 30A - IGBT
Application:Current resonance circuit
Features
• Optimized for current resonance application
• Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
• Built in fast recovery diode in one package
• Trench gate and thin wafer technology
• High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 30 A, Rg = 10
Ω, Ta = 25°C, Inductive load)
• Low tail loss
Etail = 160
μJ typ. (at V
CC = 300 V, VGE = 20 V, IC = 50 A, Rg = 15
Ω, Tc = 125°C, current resonance circuit)
Outline
1. Gate
2. Collector
3. Emitter
4. Collector
C
G
E
1
2
3
4
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
VCES
600
V
Gate to emitter voltage
VGES
±30
V
Collector current
Tc = 25 °C
IC
Note1
60
A
Tc = 100 °C
IC
Note1
30
A
Collector peak current
IC(peak)
Note1
180
A
Collector to emitter diode forward peak current
IDF(peak)
Note2
80
A
Collector dissipation
PC
208.3
W
Junction to case thermal impedance (IGBT)
θj-c
0.6
°C/W
Junction to case thermal impedance (Diode)
θj-cd
2.1
°C/W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Pulse width limited by safe operating area.
2. PW
≤ 5 μs, duty cycle ≤ 1%
R07DS1191EJ0200
Rev.2.00
Apr 02, 2014


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