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50N06 Datasheet(PDF) 7 Page - Unisonic Technologies |
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50N06 Datasheet(HTML) 7 Page - Unisonic Technologies |
7 / 8 page 50N06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 7 of 8 www.unisonic.com.tw QW-R502-088.G TYPICAL CHARACTERISTICS(Cont.) -100 Junction Temperature, TJ (°C) -50 50 200 *Note: 1. VGS=0V 2. ID=250µA 100 150 1.2 Breakdown Voltage Variation vs. Junction Temperature 0 1.1 1.0 0.9 0.8 -50 50 100 150 3.0 On-Resistance Variation vs. Junction Temperature 0 2.0 1.0 0.5 0.0 1.5 2.5 Junction Temperature, TJ (°C) *Note: 1. VGS=10V 2. ID=25A 101 100 10-1 Drain-Source Voltage, VDS (V) Maximum Safe Operating 10-1 103 Case Temperature, TC (°C) 75 100 150 50 Maximum Drain Current vs. Case Temperature 0 125 50 25 10 20 30 40 100 101 102 Operation in This Area by RDS (on) *Note: 1. Tc=25°C 2. TJ=150°C 3. Single Pulse 100µs 1ms 10ms 10ms 102 |
Similar Part No. - 50N06_13 |
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Similar Description - 50N06_13 |
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