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T6410 Datasheet(PDF) 1 Page - Digitron Semiconductors |
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T6410 Datasheet(HTML) 1 Page - Digitron Semiconductors |
1 / 2 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 T6410 SERIES BIDIRECTIONAL TRIODE THYRISTORS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Repetitive peak off-stage voltage, gate open (TJ = -65 to +110°C) T6410B T6410D T6410M T6410N VDRM 200 400 600 800 Volts RMS on-state current (conduction angle = 360°, TC ≤ 65°C) IT(RMS) 40 Amps Peak non-repetitive surge current (One Cycle, 60Hz) ITSM 300 Amps Circuit fusing considerations (TJ = -65 to +110°C, t = 1.25 to 10ms) I2t 450 A2s Peak gate power (pulse width = 10µs) PGM 40 Watts Average gate power PG(AV) 0.75 Watts Peak gate current (pulse width ≤ 10µs) IGM 12 Amps Operating junction temperature range TJ -65 to +110 °C Storage temperature range Tstg -65 to +150 °C Stud torque 30 In. lb. THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal resistance, junction to case RӨJC 0.9 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak off state current (VD = VDRM, gate open, TJ = 110°C) IDRM - - 4 mA Peak on-state voltage (either direction) (ITM = 100A peak) VTM - 1.5 2.0 Volts DC gate trigger current (continuous dc) (VD = 12V, RL = 30Ω) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) MT2(+), G(+); MT2(-), G(-), TC = -65°C MT2(+), G(-); MT2(-), G(+), TC = -65°C IGT - - - - - - 15 30 20 40 - - 50 80 50 80 125 240 mA DC gate trigger voltage (continuous dc), all trigger modes (VD = 12V, RL = 30Ω) (VD = 12V, RL = 30Ω, TC = -65°C) (VD = Rated VDRM, RL = 125Ω, TC = 110°C) VGT - - 0.2 1.35 - - 2.5 3.4 - Volts Holding current (either direction) (VD = 12V, gate open, IT = 500mA, TC = 25°C) (VD = 12V, gate open, IT = 500mA, TC = -65°C) IH - - 25 - 60 100 mA Gate controlled turn on time (VD = Rated VDRM, IT = 60A, IGT = 200mA, rise time = 0.1µs) tgt - 1.7 3 µs Critical rate of rise of commutating voltage (commutating di/dt = 22A/ms, gate unenergized, VD = Rated VDRM, IT(RMS) = 40A, TC = 65°C) dv/dt(c) - 5 - V/µs sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130205 |
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