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HGT1S20N60C3S9A Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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HGT1S20N60C3S9A Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 8 page  ©2001 Fairchild Semiconductor Corporation HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150 oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 1mH Test Circuit (Figure 17) -28 32 ns Current Rise Time trI -24 28 ns Current Turn-Off Delay Time td(OFF)I - 280 450 ns Current Fall Time tfI - 108 210 ns Turn-On Energy (Note 4) EON1 - 380 410 µJ Turn-On Energy (Note 4) EON2 -1.0 1.1 mJ Turn-Off Energy (Note 3) EOFF -1.2 1.7 mJ Thermal Resistance Junction To Case RθJC - - 0.76 oC/W NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. Typical Performance Curves Unless Otherwise Specified FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME Electrical Specifications TC = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS TC, CASE TEMPERATURE ( oC) 50 VGE = 15V 25 75 100 125 150 50 30 10 20 40 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 60 700 40 20 300 400 200 100 500 600 0 80 100 120 140 TJ = 150 oC, R G = 10Ω, VGE = 15V, L = 100µH 0 2 ICE, COLLECTOR TO EMITTER CURRENT (A) 10 5 1 100 40 10 20 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) RØJC = 0.76 oC/W, SEE NOTES PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) fMAX2 = (PD - PC) / (EON2 + EOFF) TC VGE 110oC 10V 15V 75oC 110oC 75oC 10V 15V TJ = 150 oC, R G = 10Ω, L = 1mH, V CE = 480V VGE, GATE TO EMITTER VOLTAGE (V) 10 11 12 13 14 15 2 4 6 8 150 200 250 300 350 tSC ISC 10 12 14 400 450 VCE = 360V, RG = 10Ω, TJ = 125 oC HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S |
Similar Part No. - HGT1S20N60C3S9A |
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Similar Description - HGT1S20N60C3S9A |
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