1

Motorola Bipolar Power Transistor Device Data

Darlington Complementary

Silicon Power Transistors

. . . designed for general–purpose amplifier and low frequency switching applications.

• High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V

• Collector–Emitter Sustaining Voltage — @ 30 mA

VCEO(sus) = 60 Vdc (Min) — TIP140, TIP145

• Monolithic Construction with Built–In Base–Emitter Shunt Resistor

MAXIMUM RATINGS

Rating

Symbol

TIP140

TIP145

TIP141

TIP146

TIP142

TIP147

Unit

Collector–Emitter Voltage

VCEO

60

80

100

Vdc

Collector–Base Voltage

VCB

60

80

100

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak (1)

IC

10

15

Adc

Base Current — Continuous

IB

0.5

Adc

Total Device Dissipation

@ TC = 25_C

PD

125

Watts

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.0

_C/W

Thermal Resistance, Case to Ambient

R

θJA

35.7

_C/W

(1) 5 ms,

v 10% Duty Cycle.

DARLINGTON SCHEMATICS

BASE

EMITTER

COLLECTOR

≈ 8.0 k

≈ 40

BASE

EMITTER

COLLECTOR

≈ 8.0 k

≈ 40

NPN

TIP140

TIP141

TIP142

PNP

TIP145

TIP146

TIP147

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by TIP140/D

TIP140

TIP141

TIP142

TIP145

TIP146

TIP147

10 AMPERE

DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

60 – 100 VOLTS

125 WATTS

*Motorola Preferred Device

*

NPN

PNP

*

*

*

CASE 340D–01