CP775

P-Channel MOSFET Die

Enhancement-Mode

MECHANICAL SPECIFICATIONS:

Die Size

90 x 60 MILS

Die Thickness

7.5 MILS

Gate Bonding Pad Area

14.1 x 18.8 MILS

Source Bonding Pad Area

52 x 88 MILS

Top Side Metalization

Al - 40,000Å

Back Side Metalization

Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å

Scribe Alley Width

3.15 MILS

Wafer Diameter

8 INCHES

Gross Die Per Wafer

8,000

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

20

V

Continuous Drain Current (Steady State)

ID

11

A

Maximum Pulsed Drain Current, tp=10μs

IDM

50

A

Operating and Storage Junction Temperature

TJ, Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IGSSF, IGSSR VGS=20V, VDS=0

100

nA

IDSS

VDS=30V, VGS=0

1.0

μA

BVDSS

VGS=0, ID=250μA

30

V

VGS(th)

VGS=VDS, ID=250μA

1.0

1.4

3.0

V

VSD

VGS=0, IS=2.6A

1.3

V

rDS(ON)

VGS=10V, ID=11A

12

20

mΩ

rDS(ON)

VGS=4.5V, ID=8.5A

15

30

mΩ

Crss

VDS=8.0V, VGS=0, f=1.0MHz

450

pF

Ciss

VDS=8.0V, VGS=0, f=1.0MHz

3100

pF

Coss

VDS=8.0V, VGS=0, f=1.0MHz

320

pF

R0 (8-August 2013)

The CP775 medium power P-Channel MOSFET is designed for power management and load

switching applications. The 7.5 mil thick die provides an ultra low profile device that is readily

attached using standard die attach wire bond processes.

FEATURES:

• Low on-resistance, rDS(ON)

• Low gate charge, Qgs

• High drain current density

APPLICATIONS:

• Load switching

• Power management

• DC-DC conversion

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