○Product structure：Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays

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TSZ02201-0R5R0GZ00010-1-2

© 2014 ROHM Co., Ltd. All rights reserved.

11.Mar.2014 Rev.001

www.rohm.co.jp

TSZ22111・14・001

1ch Ultra Small High Side Load Switch

BUS1DJC0GWZ

General Description

BUS1DJC0GWZ

and

BUS1DJC3GWZ

are

low

ON-Resistance

high-side

power

switch

P-channel

MOSFETs. It comes in ultra-small package for portable

digital applications. This switch IC operates on low input

voltages ranging from 1.1V to 5.0V and exhibits a typical

ON-resistance of 63 m

Ω at 3.3V. The turn ON time of the

device can be controlled to avoid inrush current.

Features

P-MOSFET high-side load switch

Low input voltage

Ultra low bias current

Ultra low standby current

Built-in discharge circuit

Built-in soft start circuit

Built-in short circuit protection

Input logic : Active-High

Ultra small package

ESD protection

Applications

Digital cameras

Mobile phones

Smart phones

Portable devices

Digital video cameras

Key Specifications

Input Voltage Range:

1.1V to 5.0V

140m

Ω (Typ)

63m

Ω (Typ)

Bias Current:

0.35µA(Typ)

Standby Current:

0.01

μA (Typ)

Operating Temperature Range:

-30°C to +85°C

Package

W(Typ) x D(Typ) x H(Max)

UCSP30L1

0.8mm x 0.8mm x 0.35mm

Typical Application Circuits

Figure 1. Typical Application Circuits

GND

EN

ON/OFF

Datasheet