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KST13MTF Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KST13MTF Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted Marking Code Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCES Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current 300 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature 150 °C Symbol Parameter Test Condition Min. Max. Units BVCES Collector-Emitter Breakdown Voltage IC=100µA, VBE=0 30 V ICBO Collector Cut-off Current VCB=30V, IE=0 100 nA IEBO Emitter Cut-off Current VEB=10V, IC=0 100 nA hFE DC Current Gain : KST13 : KST14 : KST13 : KST14 VCE=5V, IC=10mA VCE=5V, IC=100mA 5K 10K 10K 20K VCE (sat) Collector-Emitter Saturation Voltage IC=100mA, IB=0.1mA 1.5 V VBE (on) Base-Emitter On Voltage VCE=5V, IC=100mA 2.0 V fT Current Gain Bandwidth Product VCE=5V, IC=10mA f=100MHz 125 MHz Type KST13 KST14 Mark 1M 1N KST13/14 Darlington Amplifier Transistor 1M Marking 1. Base 2. Emitter 3. Collector SOT-23 1 2 3 |
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