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SI7905DN-T1-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7905DN-T1-GE3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 13 page www.vishay.com 2 Document Number: 69920 S11-2187-Rev. C, 07-Nov-11 Vishay Siliconix Si7905DN This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 94 °C/W. Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t 10 s RthJA 38 50 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 4.5 6 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 40 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 44 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 4.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 40 V, VGS = 0 V - 1 µA VDS = - 40 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V - 10 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 5 A 0.048 0.060 VGS = - 4.5 V, ID = - 4 A 0.065 0.089 Forward Transconductancea gfs VDS = - 15 V, ID = - 5 A 25 S Dynamicb Input Capacitance Ciss VDS = - 20 V, VGS = 0 V, f = 1 MHz 880 pF Output Capacitance Coss 100 Reverse Transfer Capacitance Crss 80 Total Gate Charge Qg VDS = - 20 V, VGS = - 10 V, ID = - 5 A 20 30 nC VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A 11 16.5 Gate-Source Charge Qgs 3 Gate-Drain Charge Qgd 5 Gate Resistance Rg f = 1 MHz 5.7 8.6 Turn-On Delay Time td(on) VDD = - 20 V, RL = 5 ID - 4 A, VGEN = - 4.5 V, Rg = 1 42 65 ns Rise Time tr 100 150 Turn-Off DelayTime td(off) 24 40 Fall Time tf 11 17 Turn-On Delay Time td(on) VDD = - 20 V, RL = 5 ID - 4 A, VGEN = - 10 V, Rg = 1 610 Rise Time tr 13 20 Turn-Off DelayTime td(off) 26 40 Fall Time tf 10 16 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 6 A Pulse Diode Forward Currenta ISM - 20 Body Diode Voltage VSD IF = - 4 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C 20 30 ns Body Diode Reverse Recovery Charge Qrr 15 23 nC Reverse Recovery Fall Time ta 14 ns Reverse Recovery Rise Time tb 16 |
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