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SI7905DN-T1-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SI7905DN-T1-GE3
Description  Dual P-Channel 40 V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7905DN-T1-GE3 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 69920
S11-2187-Rev. C, 07-Nov-11
Vishay Siliconix
Si7905DN
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 94 °C/W.
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, b
t
10 s
RthJA
38
50
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
4.5
6
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 40
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
- 44
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
4.3
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1
- 3
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 40 V, VGS = 0 V
- 1
µA
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS  - 5 V, VGS = - 10 V
- 10
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 5 A
0.048
0.060
VGS = - 4.5 V, ID = - 4 A
0.065
0.089
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 5 A
25
S
Dynamicb
Input Capacitance
Ciss
VDS = - 20 V, VGS = 0 V, f = 1 MHz
880
pF
Output Capacitance
Coss
100
Reverse Transfer Capacitance
Crss
80
Total Gate Charge
Qg
VDS = - 20 V, VGS = - 10 V, ID = - 5 A
20
30
nC
VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A
11
16.5
Gate-Source Charge
Qgs
3
Gate-Drain Charge
Qgd
5
Gate Resistance
Rg
f = 1 MHz
5.7
8.6
Turn-On Delay Time
td(on)
VDD = - 20 V, RL = 5 
ID  - 4 A, VGEN = - 4.5 V, Rg = 1 
42
65
ns
Rise Time
tr
100
150
Turn-Off DelayTime
td(off)
24
40
Fall Time
tf
11
17
Turn-On Delay Time
td(on)
VDD = - 20 V, RL = 5 
ID  - 4 A, VGEN = - 10 V, Rg = 1 
610
Rise Time
tr
13
20
Turn-Off DelayTime
td(off)
26
40
Fall Time
tf
10
16
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 6
A
Pulse Diode Forward Currenta
ISM
- 20
Body Diode Voltage
VSD
IF = - 4 A
- 0.8
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C
20
30
ns
Body Diode Reverse Recovery Charge
Qrr
15
23
nC
Reverse Recovery Fall Time
ta
14
ns
Reverse Recovery Rise Time
tb
16


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