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AS4PM Datasheet(PDF) 1 Page - Vishay Siliconix |
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AS4PM Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page AS4PD, AS4PG, AS4PJ, AS4PK, AS4PM www.vishay.com Vishay General Semiconductor Revision: 14-Aug-13 1 Document Number: 88770 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Standard Avalanche Surface Mount Rectifiers TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Glass passivated chip junction • Controlled avalanche characteristics • Low leakage current • High forward surge capability • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Notes (1) Mounted on 20 mm x 20 mm pad areas, 1 oz. FR4 PCB (2) Free air, mounted on recommended copper pad area PRIMARY CHARACTERISTICS IF(AV) 4.0 A VRRM 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 100 A EAS 20 mJ VF at IF = 4 A 0.92 V TJ max. 175 °C Package TO-277A (SMPC) Diode variations Single die K 2 1 eSMP ® Series TO-277A (SMPC) Anode 1 Anode 2 Cathode K Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL AS4PD AS4PG AS4PJ AS4PK AS4PM UNIT Device marking code AS4D AS4G AS4J AS4K AS4M Max. repetitive peak reverse voltage VRRM 200 400 600 800 1000 V Max. DC forward current (fig. 1) IF (1) 4.0 A IF (2) 2.4 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 100 A Non-repetitive avalanche energy at TJ = 25 °C IAS = 2.5 A max. EAS 20 mJ IAS = 1.0 A typical 30 Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C |
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