MAXIMUM RATINGS

G

D

S

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

TO-247

APT1201R2BFLL

(G)

APT1201R2SFLL

(G)

1200V 12A 1.2

Ω

Ω

Ω

Ω

Power MOS 7

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7

DS(ON)

and Q

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

• Easier To Drive

• Lower Gate Charge, Qg

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Ohms

µA

nA

Volts

MIN

TYP

MAX

1200

1.2

5

250

1000

±100

35

APT1201R2BFLL_SFLL

1200

12

48

±30

±40

403

3.23

-55 to 150

300

12

30

1300

BFLL

SFLL