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2SB868 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SB868 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB868 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.15A -0.5 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.15A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 µA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-1A ; VCE=-2V 60 260 fT Transition frequency IC=-0.5A ; VCE=-10V 30 MHz Switching times ton Turn-on time 0.15 µs tstg Storage time 0.8 µs tf Fall time IC=-1A ; IB1=-IB2=-0.1A 0.15 µs hFE-2 Classifications R Q P 60-120 90-180 130-260 |
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