OM6002ST datasheet(2/4 Pages) ETC2

Part #	OM6002ST

Description	POWER MOSFET IN HERMETIC ISOLATED JEDEC TO 257AA PACKAGE

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ELECTRICAL CHARACTERISTICS: (T

C = 25°C unless otherwise noted)

ELECTRICAL CHARACTERISTICS: (T

C = 25°C unless otherwise noted)

STATIC P/N OM6101ST / OM6001ST (100V)

STATIC P/N OM6102ST / OM6002 ST (200V)

Parameter

Min. Typ. Max. Units Test Conditions

Parameter

Min. Typ. Max. Units Test Conditions

BV

DSS

Drain-Source Breakdown

100

V

GS = 0,

BV

DSS

Drain-Source Breakdown

200

V

GS = 0,

Voltage

I

D = 250 mA

Voltage

I

D = 250 mA

V

GS(th)

Gate-Threshold Voltage

2.0

4.0

V

DS = VGS, ID = 250 mAVGS(th)

Gate-Threshold Voltage

2.0

4.0

V

DS = VGS, ID = 250 mA

I

GSS

Gate-Body Leakage (OM6101)

± 500

nA

V

GS = ± 12.8 V

I

GSS

Gate-Body Leakage (OM6102)

± 500

nA

V

GS = ± 12.8 V

I

GSS

Gate-Body Leakage (OM6001)

± 100

nA

V

GS = ± 20 V

I

GSS

Gate-Body Leakage (OM6002)

± 100

nA

V

GS = ± 20 V

I

DSS

Zero Gate Voltage Drain

0.1

0.25

mA

V

DS = Max. Rat., VGS = 0

I

DSS

Zero Gate Voltage Drain

0.1

0.25

mA

V

DS = Max. Rat., VGS = 0

Current

0.2

1.0

mA

V

DS = 0.8 Max. Rat., VGS = 0,

Current

0.2

1.0

mA

V

DS = 0.8 Max. Rat., VGS = 0,

T

C = 125° C

T

C = 125° C

I

D(on)

On-State Drain Current1

14

A

V

DS

2 V

DS(on), VGS = 10 V

I

D(on)

On-State Drain Current1

9.0

A

V

DS

2 V

DS(on), VGS = 10 V

V

DS(on)

Static Drain-Source On-State

1.2

1.60

V

GS = 10 V, ID = 8 A

V

DS(on)

Static Drain-Source On-State

1.25

2.2

V

GS = 10 V, ID = 5.0 A

Voltage1

R

DS(on)

Static Drain-Source On-State

0.20

V

GS = 10 V, ID = 8 A

R

DS(on)

Static Drain-Source On-State

0.44

V

GS = 10 V, ID = 5.0 A

Resistance1

R

DS(on)

Static Drain-Source On-State

0.40

V

GS = 10 V, ID = 8 A,

R

DS(on)

Static Drain-Source On-State

0.88

V

GS = 10 V, ID = 5.0 A,

Resistance1

T

C = 125 C

Resistance1

T

C = 125 C

DYNAMIC

g

fs

Forward Transductance1

4.0

S(W )

V

DS

2 V

DS(on), ID = 8 A

g

fs

Forward Transductance1

3.0

5.8

S(W )

V

DS

2 V

DS(on), ID = 5.0 A

C

iss

Input Capacitance

750

pF

V

GS = 0

C

iss

Input Capacitance

780

pF

V

GS = 0

C

oss

Output Capacitance

250

pF

V

DS = 25 V

C

oss

Output Capacitance

150

pF

V

DS = 25 V

C

rss

Reverse Transfer Capacitance

100

pF

f = 1 MHz

C

rss

Reverse Transfer Capacitance

55

pF

f = 1 MHz

t

d(on)

Turn-On Delay Time

15

ns

V

DD = 30 V, ID @ 8 A

t

d(on)

Turn-On Delay Time

9

ns

V

DD = 75V, ID @ 5.0 A

t

r

Rise Time

35

ns

R

g = 7.5 W , VDS = 10 V

t

r

Rise Time

18

ns

R

g = 7.5 W , VGS =10 V

t

d(off)

Turn-Off Delay Time

38

ns

t

d(off)

Turn-Off Delay Time

45

ns

t

f

Fall Time

23

ns

t

f

Fall Time

27

ns

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

S

Continuous Source Current

- 14

A

Modified MOSPOWER

I

S

Continuous Source Current

- 9

A

Modified MOSPOWER

(Body Diode)

symbol showing

(Body Diode)

symbol showing

I

SM

Source Current1

- 56

A

the integral P-N

I

SM

Source Current1

- 36

A

the integral P-N

(Body Diode)

Junction rectifier.

(Body Diode)

Junction rectifier.

V

SD

Diode Forward Voltage1

- 2.5

V

T

C = 25 C, IS = -14 A, VGS = 0

V

SD

Diode Forward Voltage1

- 2

V

T

C = 25 C, IS = -9 A, VGS = 0

V

SD

Diode Forward Voltage1

- 2.5

V

T

C = 25 C, IS = -12 A, VGS = 0

V

SD

Diode Forward Voltage1

- 2

V

T

C = 25 C, IS = -8 A, VGS = 0

t

rr

Reverse Recovery Time

100

ns

T

J = 150 C, IF = IS,trr

Reverse Recovery Time

250

ns

T

J = 150 C, IF = IS,

dl

F/ds = 100 A/ms

dl

F/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle

2%.

1 Pulse Test: Pulse Width 300msec, Duty Cycle

2%.

G

D

S

G

D

S

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