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V23990-P764-A-PM Datasheet(PDF) 5 Page - Vincotech |
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V23990-P764-A-PM Datasheet(HTML) 5 Page - Vincotech |
5 / 24 page V23990-P764-A-PM Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Conditions Characteristic Values Value Tj=25°C 5 5,8 6,5 Tj=150°C Tj=25°C 1,58 2,1 Tj=150°C 1,82 Tj=25°C 0,5 Tj=150°C Tj=25°C 700 Tj=150°C Tj=25°C 100 Tj=150°C 102 Tj=25°C 14 Tj=150°C 18,6 Tj=25°C 158 Tj=150°C 185 Tj=25°C 108 Tj=150°C 125 Tj=25°C 0,43 Tj=150°C 0,63 Tj=25°C 1,42 Tj=150°C 1,97 Thermal resistance chip to heatsink per chip RthJH 0,8 Thermal resistance chip to case per chip RthJC 0,53 Tj=25°C 1,2 1,78 2,1 Tj=150°C 1,77 Thermal resistance chip to heatsink per chip RthJH 1,81 K/W Thermal resistance chip to case per chip RthJC 1,19 K/W Tj=25°C 1,65 2,1 Tj=150°C 1,56 Tj=25°C 140 Tj=150°C Tj=25°C 40 Tj=150°C 47 Tj=25°C 22 Tj=150°C 141 Tj=25°C 1 Tj=150°C 2,37 di(rec)max Tj=25°C 6000 /dt Tj=150°C 3416 Tj=25°C 0,35 Tj=150°C 0,58 Thermal resistance chip to heatsink per chip RthJH 1,85 Thermal resistance chip to case per chip RthJC 1,22 20,9 22 23,1 90 Tj=25°C Tj=25°C Tc=100°C Tj=25°C 480 20 10 600 300 300 25 50 300 50 ±15 Rgon=8 ±15 50 Thermal grease thickness≤50µm λ = 0,61 W/m·K Thermistor Brake FWD IRRM ±15 Diode forward voltage Reverse leakage current 0 f=1MHz mA nA mWs VCE=VGE 15 0 Rgon=8 Rgoff=8 Brake IGBT Thermal grease thickness≤50µm λ = 0,61 W/m·K Thermal grease thickness≤50µm λ = 0,61 W/m·K Rated resistance R25 k Tol. ±5% Deviation of R100 DR/R R100=1486.1 %/K B-value B(25/100) K Power dissipation given Epcos-Typ P mW Tol. ±3% ±15 20 mWs µC V µA ns A/µs A Gate emitter threshold voltage VGE(th) VCE(sat) Fall time ICES IGES Collector-emitter cut-off incl diode Gate-emitter leakage current Turn-on delay time Rgint td(on) Integrated Gate resistor V 310 K/W nC Reverse recovery energy VF Ir trr Qrr Erec Reverse recovery time Peak rate of fall of recovery current Peak reverse recovery current Reverse recovered charge 0 Diode forward voltage VF Reverse transfer capacitance QGate Brake Inverse Diode tr Gate charge Collector-emitter saturation voltage Input capacitance Output capacitance Crss Cies Coss Turn-off energy loss per pulse Eoff Turn-on energy loss per pulse Rise time Turn-off delay time td(off) tf Eon 50 0,0008 Tj=25°C Tj=25°C 50 2,9 200 3140 210 4000 K/W pF ns V V none copyright Vincotech 5 Revision: 3 |
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