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V23990-P638-A40-P1-14 Datasheet(PDF) 4 Page - Vincotech

Part # V23990-P638-A40-P1-14
Description  INDUstrial drives
Download  23 Pages
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Manufacturer  VINCOTECH [Vincotech]
Direct Link  http://www.vincotech.com
Logo VINCOTECH - Vincotech

V23990-P638-A40-P1-14 Datasheet(HTML) 4 Page - Vincotech

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V23990-P638-A40
preliminary datasheet
Parameter
Symbol
Unit
VGE [V] or
VGS [V]
Vr [V]
or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Min
Typ
Max
Value
Conditions
Characteristic Values
Tj=25°C
5
5,8
6,5
Tj=150°C
Tj=25°C
1,6
1,87
2,3
Tj=150°C
2,21
Tj=25°C
0,0005
Tj=150°C
Tj=25°C
120
Tj=150°C
none
Tj=25°C
83
Tj=150°C
79
Tj=25°C
28
Tj=150°C
32
Tj=25°C
178
Tj=150°C
243
Tj=25°C
77
Tj=150°C
132
Tj=25°C
0,26
Tj=150°C
0,39
Tj=25°C
0,24
Tj=150°C
0,41
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness
≤50um
λ = 1 W/mK
2,44
K/W
Tj=25°C
1
1,67
2,3
Tj=150°C
1,74
Tj=25°C
250
Tj=150°C
Tj=25°C
2,77
Tj=150°C
3,62
Tj=25°C
357
Tj=150°C
649
Tj=25°C
0,44
Tj=150°C
0,44
di(rec)max
Tj=25°C
18
/dt
Tj=150°C
14
Tj=25°C
0,20
Tj=150°C
0,44
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness
≤50um
λ = 1 W/mK
3,03
K/W
Vincotech NTC Reference
B
K
T=25°C
3950
K
T=25°C
3996
B-value
Tol. ±3%
B(25/100)
VGE(th)
B-value
B(25/50)
Tol. ±3%
V
V
μA
mWs
μC
V
ns
A/
μs
A
%
22000
5
-5
15
Tj=25°C
Tj=25°C
28
2
200
0,00015
Gate charge
Input capacitance
QGate
Reverse transfer capacitance
Coss
Turn-off energy loss per pulse
Rise time
Turn-on delay time
Brake Transistor
Collector-emitter cut-off incl diode
Collector-emitter saturation voltage
Gate emitter threshold voltage
Peak rate of fall of recovery current
Peak reverse recovery current
Reverse recovered charge
Gate-emitter leakage current
td(off)
Eoff
Integrated Gate resistor
960
600
25
Fall time
td(on)
tr
Turn-off delay time
Eon
Output capacitance
Crss
Cies
Turn-on energy loss per pulse
nC
mW/K
Power dissipation
P
mW
T=25°C
Rated resistance
R
Power dissipation constant
Deviation of R100
ΔR/R
R100=1486
IGES
0
±15
±15
Rgint
tf
Rgon=64
Rgoff=64
VCE=VGE
ICES
VCE(sat)
f=1MHz
1200
0
20
15
0
ns
pF
mWs
mA
nA
25
Diode forward voltage
Reverse leakage current
Brake FWD
Reverse recovery energy
trr
Qrr
Erec
Reverse recovery time
VF
Ir
IRRM
Thermistor
±15
Rgon=64
Rgon=64
3
4
4
4
1200
600
4
T=25°C
T=100°C
T=25°C
250
copyright Vincotech
4
Revision: 1


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