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V23990-P631-A-P1-14 Datasheet(PDF) 1 Page - Vincotech |
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V23990-P631-A-P1-14 Datasheet(HTML) 1 Page - Vincotech |
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1 / 18 page  V23990-P631-A-PM preliminary data sheet flow 90PIM 1 600V/6A V23990-P631-A-02-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage VRRM 1600 V Periodische Rückw. Spitzensperrspannung Forward current per diode DC current T h=80°C; I FAV 15 A Dauergrenzstrom Tc=80°C 15 Surge forward current tp=10ms Tj=25°C IFSM 150 A Stoßstrom Grenzwert I 2t-value tp=10ms Tj=25°C I 2t 110 A2s Grenzlastintegral Power dissipation per Diode Tj=150°C Th=80°C Ptot 34 W Verlustleistung pro Diode Tc=80°C 15 max. Chip temperature T jmax 150 °C max. Chiptemperatur Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage VCE 600 V Kollektor-Emitter-Sperrspannung DC collector current Tj=175°C T h=80°C, IC 10 A Kollektor-Dauergleichstrom Tc=80°C 10 Repetitive peak collector current tp limited by Tj max Icpuls 18 A Periodischer Kollektorspitzenstrom Power dissipation per IGBT Tj=175°C T h=80°C Ptot 31 W Verlustleistung pro IGBT Tc=80°C 47 Gate-emitter peak voltage VGE ±20 V Gate-Emitter-Spitzenspannung SC withstand time* Tj150°C VGE=15V tSC 6us Kurzschlußverhalten* VCC=360V max. Chip temperature T jmax 175 °C max. Chiptemperatur Diode Inverter Diode Wechselrichter DC forward current Tj=175°C T h=80°C, IF 10 A Dauergleichstrom Tc=80°C 10 Repetitive peak forward current tp limited by Tj max IFRM 18 A Periodischer Spitzenstrom Power dissipation per Diode Tj=175°C T h=80°C Ptot 24 W Verlustleistung pro Diode Tc=80°C 36 max. Chip temperature T jmax 175 °C max. Chiptemperatur copyright by Tyco Electronics Finsinger Feld 1, D-85521 Ottobrunn Copyright by Vincotech Revision:1 |
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