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V23990-P631-A-P1-14 Datasheet(PDF) 3 Page - Vincotech |
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V23990-P631-A-P1-14 Datasheet(HTML) 3 Page - Vincotech |
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3 / 18 page  V23990-P631-A-PM preliminary data sheet flow 90PIM 1 600V/6A V23990-P631-A-02-14 Characteristic values/ Charateristische Werte Description Symbol Conditions Datasheet values Unit T(C°) Other conditions VGE(V) VR(V) VCE(V) IC(A) IF(A) (Rgon-Rgoff) VGS(V) VDS(V) Id(A) Min Typ Max Input Rectifier Bridge Gleichrichter Forward voltage VF Tj=25°C 15 1,19 1,5 V Durchlaßpannung Tj=125°C 1,16 Threshold voltage (for power loss calc. only) Vto Tj=25°C 30 0,92 V Schleusenspannung Tj=125°C 0,79 Slope resistance (for power loss calc. only) rt Tj=25°C 0,018 Ohm Ersatzwiderstand Tj=125°C 30 0,025 Reverse current Ir Tj=25°C 1500 0,01 mA Sperrstrom Tj=150°C 3 Thermal resistance chip to heatsink per chip Wärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal grease thickness50um 2,06 K/W Thermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip RthJC Warmeleitpaste Dicke50um = 0,61 W/mK 1,3596 Transistor Inverter Transistor Wechselrichter Gate emitter threshold voltage VGE(th) Tj=25°C VCE=VGE 0,00009 5 5,8 6,5 V Gate-Schwellenspannung Tj=125°C Collector-emitter saturation voltage VCE(sat) Tj=25°C 15 6 1,49 2 V Kollektor-Emitter Sättigungsspannung Tj=125°C 1,68 Collector-emitter cut-off ICES Tj=25°C 0 600 0,06 mA Kollektor-Emitter Reststrom Tj=125°C Gate-emitter leakage current IGES Tj=25°C 20 0 350 nA Gate-Emitter Reststrom Tj=125°C Integrated Gate resistor Rgint none Ohm Integrirter Gate Widerstand Turn-on delay time td(on) Tj=25°C Rgoff=32 ns Einschaltverzögerungszeit Tj=125°C Rgon=64 15 300 6 18 Rise time tr Tj=25°C Rgoff=32 ns Anstiegszeit Tj=125°C Rgon=64 15 300 6 15 Turn-off delay time td(off) Tj=25°C Rgoff=32 ns Abschaltverzögerungszeit Tj=125°C Rgon=64 15 300 6 177 Fall time tf Tj=25°C Rgoff=32 ns Fallzeit Tj=125°C Rgon=64 15 300 6 87 Turn-on energy loss per pulse Eon Tj=25°C Rgoff=32 mWs Einschaltverlustenergie pro Puls Tj=125°C Rgon=64 15 300 6 0,1393 Turn-off energy loss per pulse Eoff Tj=25°C Rgoff=32 mWs Abschaltverlustenergie pro Puls Tj=125°C Rgon=64 15 300 6 0,1794 SC withstand time tSC us Kurzschlußverhalten Input capacitance Cies Tj=25°C f=1MHz 0 25 0,368 nF Eingangskapazität Tj=125°C Output capacitance Coss Tj=25°C f=1MHz 0 25 0,028 nF Ausgangskapazität Tj=125°C Reverse transfer capacitance Crss Tj=25°C f=1MHz 0 25 0,011 nF Rückwirkungskapazität Tj=125°C Gate charge QGate Tj=25°C tbd nC Gate Ladung Tj=125°C Thermal resistance chip to heatsink per chip Wärmewiderstand Chip-Kühlkörper pro Chip R thJH Thermal grease thickness50um 3,04 K/W Thermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip RthJC Warmeleitpaste Dicke50um = 0,61 W/mK 2,01 K/W Diode Inverter Diode Wechselrichter Diode forward voltage VF Tj=25°C 6 1,56 2,1 V Durchlaßspannung Tj=125°C 1,5 Peak reverse recovery current IRM Tj=25°C A Rückstromspitze Tj=125°C diF/dt = 510 A/us 0 300 6 6,29 Reverse recovery time trr Tj=25°C ns Sperreverzögerungszeit Tj=125°C diF/dt = 510 A/us 0 300 6 182,5 Reverse recovered charge Qrr Tj=25°C uC Sperrverzögerungsladung Tj=125°C diF/dt = 510 A/us 0 300 6 0,4336 Reverse recovered energy Erec Tj=25°C mWs Sperrverzögerungsenergie Tj=125°C diF/dt = 510 A/us 0 300 6 0,0854 Thermal resistance chip to heatsink per chip Wärmewiderstand Chip-Kühlkörper pro Chip R thJH Thermal grease thickness50um 4 K/W Thermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip RthJC Warmeleitpaste Dicke50um = 0,61 W/mK 2,64 K/W copyright by Tyco Electronics Finsinger Feld 1, D-85521 Ottobrunn Copyright by Vincotech Revision:1 |
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