BZB84-B13 datasheet(8/14 Pages) PHILIPS

Part #	BZB84-B13

Description	General-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package

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Manufacturer	PHILIPS [NXP Semiconductors]

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8 / 14 page

BZB84_SER_3

Product data sheet

Rev. 03 — 9 June 2009

8 of 14

NXP Semiconductors

BZB84 series

Dual Zener diodes

[1]

f = 1 MHz; VR =0V

[2]

tp = 100 µs; square wave; Tj =25 °C prior to surge

Table 11.

Characteristics per type; BZB84-C27 to BZB84-C75

Tj =25 °C unless otherwise speciﬁed.

BZB84-

Cxxx

Working voltage

VZ (V)

Differential

resistance

rdif (Ω)

Reverse current

IR (µA)

Temperature

coefﬁcient

SZ (mV/K)

Diode

capacitance

Cd (pF)[1]

Non-repetitive

peak reverse

current

IZSM (A)[2]

IZ =2mA

IZ = 0.5 mA IZ =2mA

IZ =2mA

Min

Max

VR (V)

Min

Max

27

25.1

28.9

300

80

0.05

18.9

21.4

25.3

50

1.00

30

28.0

32.0

300

80

0.05

21.0

24.4

29.4

50

1.00

33

31.0

35.0

325

80

0.05

23.1

27.4

33.4

45

0.90

36

34.0

38.0

350

90

0.05

25.2

30.4

37.4

45

0.80

39

37.0

41.0

350

130

0.05

27.3

33.4

41.2

45

0.70

43

40.0

46.0

375

150

0.05

30.1

37.6

46.6

40

0.60

47

44.0

50.0

375

170

0.05

32.9

42.0

51.8

40

0.50

51

48.0

54.0

400

180

0.05

35.7

46.6

57.2

40

0.40

56

52.0

60.0

425

200

0.05

39.2

52.2

63.8

40

0.30

62

58.0

66.0

450

215

0.05

43.4

58.8

71.6

35

0.30

68

64.0

72.0

475

240

0.05

47.6

65.6

79.8

35

0.25

75

70.0

79.0

500

255

0.05

52.5

73.4

88.6

35

0.20

(1) Tj =25 °C (prior to surge)

(2) Tj = 150 °C (prior to surge)

Tj =25 °C

Fig 1.

Per diode: Non-repetitive peak reverse power

dissipation as a function of pulse duration;

maximum values

Fig 2.

Per diode: Forward current as a function of

forward voltage; typical values

mbg801

103

1

tp (ms)

PZSM

(W)

10

102

10−1

10

1

(1)

(2)

VF (V)

0.6

1

0.8

mbg781

100

200

300

IF

(mA)

0

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