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IRHNJ63434 Datasheet(PDF) 2 Page - International Rectifier

Part # IRHNJ63434
Description  RADIATION HARDENED POWER MOSFET SURFACE-MOUNT
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRHNJ63434 Datasheet(HTML) 2 Page - International Rectifier

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IRHNJ67434
Pre-Irradiation
2
www.irf.com
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
3.4
ISM
Pulse Source Current (Body Diode)
À
13.6
VSD Diode Forward Voltage
1.0
V
Tj = 25°C, IS = 3.4A, VGS = 0V Ã
trr
Reverse Recovery Time
741
ns
Tj = 25°C, IF = 3.4A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
2.1
µCVDD ≤ 50V Ã
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
550
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
0.47
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
2.9
VGS = 12V, ID = 2.2A
Resistance
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
3.4
S
VDS = 15V, IDS = 2.2A Ã
IDSS
Zero Gate Voltage Drain Current
10
VDS = 440V ,VGS=0V
——
25
VDS = 440V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
35
VGS = 12V, ID = 3.4A
Qgs
Gate-to-Source Charge
12
nC
VDS = 275V
Qgd
Gate-to-Drain (‘Miller’) Charge
15
td(on)
Turn-On Delay Time
17
VDD = 275V, ID = 3.4A,
tr
Rise Time
9.3
VGS = 12V, RG = 7.5Ω
td(off)
Turn-Off Delay Time
33
tf
Fall Time
17
LS + LD
Total Inductance
4.0
Ciss
Input Capacitance
1222
VGS = 0V, VDS = 25V
Coss
Output Capacitance
80
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
1.9
nA
Ã
nH
ns
µA
Measured from the center of
drain pad to center of source pad
Rg
Internal Gate Resistance
1.5
f = 1.0MHz, open drain
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
1.67
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.


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