IRHLNM87Y20

Pre-Irradiation

2

www.irf.com

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

17*

ISM

Pulse Source Current (Body Diode)

À

——

68

VSD

Diode Forward Voltage

—

—

1.0

V

trr

Reverse Recovery Time

—

—

41

ns

Tj = 25°C, IF = 17A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

33

nC

VDD ≤ 20V Ã

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

20

—

—

V

VGS = 0V, ID = 250µA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown —

0.028

—

V/°C

Reference to 25°C, ID = 250µA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

12

15

VGS = 4.5V, ID = 17A*

Resistance

—

11

14

VGS = 7.0V, ID = 17A*

VGS(th)

Gate Threshold Voltage

1.0

—

2.3

V

VDS = VGS, ID = 250µA

∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient

—

-4.2

—

mV/°C

gfs

Forward Transconductance

20

—

—

S

VDS = 15V, IDS = 17A Ã

IDSS

Zero Gate Voltage Drain Current

—

—

1.0

VDS = 16V ,VGS = 0V

——

10

VDS = 16V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 12V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -12V

Qg

Total Gate Charge

—

18

24

VGS = 5.5V, ID = 17A

Qgs

Gate-to-Source Charge

—

5.0

7.2

nC

VDS = 10V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

4.0

6.3

Turn-On Delay Time

—

18

24

VDD = 10V, ID = 17A

tr

Rise Time

—

73

150

VGS = 5.5V, RG = 2.35Ω

Turn-Off Delay Time

—

24

32

tf

Fall Time

—

10

18

LS + LD

Total Inductance

—

1.0

—

Ciss

Input Capacitance

—

2336

—

VGS = 0V, VDS = 20V

Coss

Output Capacitance

—

596

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

147

—

nA

Ã

nH

ns

µA

Measured from the center of

drain pad to center of source pad

Rg

Gate Resistance

0.76

Ω

f = 1.0MHz, open drain

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction-to-Case

—

—

3.5

°C/W

* Current is limited by package

‡