FCPF190N60E datasheet(3/10 Pages) FAIRCHILD

Part #	FCPF190N60E

Description	FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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FCP190N60E / FCPF190N60E Rev. C10

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3

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

0.1

1

10

0.3

1

10

50

*Notes:

1. 250μs Pulse Test

2. TC = 25

oC

VDS, Drain to Source Voltage[V]

VGS = 15.0V

10.0V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

2345678

1

10

100

-55

oC

150

oC

*Notes:

1. VDS = 20V

2. 250μs Pulse Test

25

oC

VGS, Gate to Source Voltage[V]

0

1020304050

60

0.1

0.2

0.3

0.4

*Note: TC = 25

oC

VGS = 20V

VGS = 10V

ID, Drain Current [A]

0.20.4

0.60.8

1.01.2

1.41.6

1

10

100

*Notes:

1. V

GS = 0V

2. 250μs Pulse Test

150

oC

V

SD, Body Diode Forward Voltage [V]

25

oC

0.1

1

10

100

600

0.5

1

10

100

1000

10000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

VDS, Drain to Source Voltage [V]

0

15

30456075

0

2

4

6

8

10

*Note: ID = 10A

VDS = 120V

VDS = 300V

VDS = 480V

Qg, Total Gate Charge [nC]

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