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IRFHM4234TRPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFHM4234TRPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  2 www.irf.com © 2013 International Rectifier August 16, 2013 IRFHM4234TRPbF D S G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V VGS = 0V, ID = 250µA BV DSS/TJ Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 3.5 4.4 m VGS = 10V, ID = 30A ––– 5.6 7.1 VGS = 4.5V, ID = 30A VGS(th) Gate Threshold Voltage 1.1 1.6 2.1 V VDS = VGS, ID = 25µA V GS(th) Gate Threshold Voltage Coefficient ––– -5.5 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 20V, VGS = 0V IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 60 ––– ––– S VDS = 5.0V, ID = 30A Qg Total Gate Charge ––– 17 ––– nC VGS = 10V, VDS = 13V, ID = 30A Qg Total Gate Charge ––– 8.2 12.3 Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.6 ––– VDS = 13V Qgs2 Post-Vth Gate-to-Source Charge ––– 1.6 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 3.1 ––– ID = 30A Qgodr Gate Charge Overdrive ––– 1.9 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 4.7 ––– Qoss Output Charge ––– 7.7 ––– nC VDS = 16V, VGS = 0V RG Gate Resistance ––– 1.8 ––– td(on) Turn-On Delay Time ––– 7.8 ––– VDD = 13V, VGS = 4.5V tr Rise Time ––– 30 ––– ns ID = 30A td(off) Turn-Off Delay Time ––– 8.0 ––– RG=1.8 tf Fall Time ––– 5.3 ––– Ciss Input Capacitance ––– 1011 ––– VGS = 0V Coss Output Capacitance ––– 286 ––– pF VDS = 13V Crss Reverse Transfer Capacitance ––– 83 ––– ƒ = 1.0MHz Avalanche Characteristics Parameter Typ. Max. EAS Single Pulse Avalanche Energy ––– 39 IAR Avalanche Current ––– 30 Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 40 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 270 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 30A, VGS = 0V trr Reverse Recovery Time ––– 10 15 ns TJ = 25°C, IF = 30A, VDD = 13V Qrr Reverse Recovery Charge ––– 11 17 nC di/dt = 200A/µs Parameter Typ. Max. Units RJC (Bottom) Junction-to-Case ––– 4.4 RJC (Top) Junction-to-Case ––– 40 °C/W RJA Junction-to-Ambient ––– 45 RJA (<10s) Junction-to-Ambient ––– 31 Thermal Resistance |
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