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IRFH8321PBF Datasheet(PDF) 6 Page - International Rectifier |
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IRFH8321PBF Datasheet(HTML) 6 Page - International Rectifier |
6 / 9 page IRFH8321PbF www.irf.com © 2012 International Rectifier August 3, 2012 6 Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01 tp D.U.T L VDS + - VDD DRIVER A 15V 20V VGS Fig 18a. Gate Charge Test Circuit Fig 18b. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr VDS 90% 10% VGS td(on) tr td(off) tf VDS Pulse Width µs Duty Factor RD VGS RG D.U.T. 10V + - VDD VGS Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs CircuitLayoutConsiderations Low Stray Inductance Ground Plane LowLeakageInductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * VGS = 5V for Logic Level Devices * + - + + + - - - RG VDD dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D.U.T InductorCurrent 1K VCC DUT 0 L |
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