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IRFH8321PBF Datasheet(PDF) 6 Page - International Rectifier

Part # IRFH8321PBF
Description  HEXFETPower MOSFET
Download  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFH8321PBF Datasheet(HTML) 6 Page - International Rectifier

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IRFH8321PbF
www.irf.com © 2012 International Rectifier
August 3, 2012
6
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
RG
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
VGS
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
VDS
90%
10%
VGS
td(on)
tr
td(off) tf
VDS
Pulse Width µs
Duty Factor 
RD
VGS
RG
D.U.T.
10V
+
- VDD
VGS
Fig 15.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
CircuitLayoutConsiderations
Low Stray Inductance
Ground Plane
LowLeakageInductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T

InductorCurrent
1K
VCC
DUT
0
L


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