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V23990-P587-X2X-D2-14 Datasheet(PDF) 3 Page - Vincotech |
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V23990-P587-X2X-D2-14 Datasheet(HTML) 3 Page - Vincotech |
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3 / 23 page  V23990-P587-*2*-PM Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 1,31 1,30 Tj=125°C 1,33 1,37 Tj=25°C 0,92 Tj=125°C 0,82 Tj=25°C 7,81 Tj=125°C 10,08 Tj=25°C Tj=150°C 2 Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness≤50um λ = 1 W/mK 1,91 Thermal resistance chip to heatsink per chip RthJH Preapplied Phase change material 1,63 Tj=25°C 5 5,8 6,5 Tj=125°C Tj=25°C 1,05 1,64 1,85 Tj=125°C 1,83 Tj=25°C 0,0038 Tj=125°C Tj=25°C 600 Tj=125°C Tj=25°C 135 Tj=125°C 137 Tj=25°C 23 Tj=125°C 29 Tj=25°C 175 Tj=125°C 204 Tj=25°C 50 Tj=125°C 69 Tj=25°C 1,00 Tj=125°C 2,00 Tj=25°C 1,60 Tj=125°C 2,13 Thermal resistance chip to heatsink per chip RthJH 1,15 Thermal resistance chip to heatsink per chip RthJH 0,89 Tj=25°C 1,2 1,84 1,9 Tj=125°C 1,92 Tj=25°C 65 Tj=125°C 71 Tj=25°C 136 Tj=125°C 258 Tj=25°C 2,99 Tj=125°C 6,43 di(rec)max Tj=25°C 2980 /dt Tj=125°C 2197 Tj=25°C 0,634 Tj=125°C 1,339 Thermal resistance chip to heatsink per chip RthJH 1,51 Thermal resistance chip to heatsink per chip RthJH 1,27 Preapplied Phase change material Thermal grease thickness≤50um λ = 1 W/mK Preapplied Phase change material K/W Tj=25°C 470 - 4620 V 75 ±15 0 tr td(off) VCE=VGE Thermal grease thickness≤50um λ = 1 W/mK QGate Erec Coss Crss Qrr trr IGES tf Eon Eoff td(on) IRRM VF VGE(th) VCE(sat) ICES Rgint Input capacitance Output capacitance Turn-off energy loss per pulse Integrated Gate resistor Inverter Transistor Gate emitter threshold voltage Value Conditions Characteristic Values Forward voltage Threshold voltage (for power loss calc. only) Slope resistance (for power loss calc. only) VF Vto rt Input Rectifier Diode 50 50 50 V V m mA Reverse current Ir µC mWs A/µs K/W K/W f=1MHz Rgon=8 0 20 15 Rgoff=8 0 75 50 ±15 Turn-on energy loss per pulse Reverse recovered charge Inverter Diode Peak reverse recovery current Reverse transfer capacitance Diode forward voltage Gate charge Cies Reverse recovery time Reverse recovered energy Peak rate of fall of recovery current Collector-emitter cut-off current incl. Diode Fall time Turn-off delay time Turn-on delay time Rise time Gate-emitter leakage current Collector-emitter saturation voltage 600 25 0 480 50 75 0,0012 300 300 1600 Rgon=8 137 288 V ns A nC nA K/W V mA mWs ns pF K/W Tj=25°C copyright Vincotech 3 Revision: 2 |
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