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IRFB3607GPBF Datasheet(PDF) 1 Page - International Rectifier

Part # IRFB3607GPBF
Description  High Efficiency Synchronous Rectification in SMPS
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFB3607GPBF Datasheet(HTML) 1 Page - International Rectifier

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08/12/10
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
l Lead-Free
l Halogen-Free
www.irf.com
1
IRFB3607GPbF
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
HEXFET® Power MOSFET
S
D
G
VDSS
75V
RDS(on) typ.
7.34m
:
max.
9.0m:
ID
80A
GD
S
Gate
Drain
Source
TO-220AB
IRFB3607GPbF
D
S
D
G
Absolute Maximum Ratings
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
g
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
1.045
RθCS
Case-to-Sink, Flat Greased Surface, TO-220
0.50
–––
°C/W
RθJA
Junction-to-Ambient, TO-220
–––
62
120
46
14
140
27
-55 to + 175
± 20
0.96
10lb
xin (1.1Nxm)
300
Max.
80
™
56
™
310
PD - 96329


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